- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371367 > 20N03HL (Motorola, Inc.) HDTMOS E-FET High Density Power FET DPAK for Surface Mount PDF資料下載
參數(shù)資料
| 型號： | 20N03HL |
| 廠商： | Motorola, Inc. |
| 英文描述： | HDTMOS E-FET High Density Power FET DPAK for Surface Mount |
| 中文描述： | HDTMOS電子FET的高密度功率FET DPAK封裝的表面貼裝 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 250K |
| 代理商： | 20N03HL |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0) (3)
V(BR)DSS
30
—
—
43
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
IDSS
—
—
—
—
10
100
μ
Adc
Gate–Body Leakage Current
(VGS =
±
15 Vdc, VDS = 0 Vdc)
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0) (3)
VGS(th)
1.0
—
1.5
5.0
2.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 10 Adc)
(Cpk
≥
2.0) (3)
RDS(on)
—
0.034
0.030
0.040
0.035
Ohm
Drain–to–Source On–Voltage (VGS = 5.0 Vdc)
(ID = 20 Adc)
(ID = 10 Adc, TJ = 125
°
C)
VDS(on)
—
—
0.55
—
0.8
0.7
Vdc
Forward Transconductance
(VDS = 5.0 Vdc, ID = 10 Adc)
gFS
10
13
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
880
1260
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
300
420
Transfer Capacitance
—
80
112
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
13
15.8
ns
Rise Time
(VDD = 15 Vdc, ID = 20 Adc,
VGS = 5.0 Vdc,
—
212
238
Turn–Off Delay Time
—
37
30
Fall Time
—
84
96
Gate Charge
(See Figure 8)
VGS = 5.0 Vdc)
—
13.4
18.9
nC
(VDS = 24 Vdc, ID = 20 Adc,
—
3.0
—
—
7.3
—
—
6.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(Cpk
≥
2.0) (3)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.95
0.87
1.1
—
Vdc
Reverse Recovery Time
(See Figure 15)
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
33
—
ns
(IS = 20 Adc, VGS = 0 Vdc,
—
23
—
—
10
—
Reverse Recovery Stored Charge
QRR
—
33
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk = Absolute Value of Spec (Spec–AVG/3.516
μ
A).
相關PDF資料 |
PDF描述 |
|---|---|
| 20N60A4 | 600V, SMPS Series N-Channel IGBTsnull |
| 20NAB06 | 3-phase bridge rectifier +braking chopper +3-phase bridge inverter |
| 20NAB12 | 3-phase bridge rectifier +braking chopper +3-phase bridge inverter |
| 20PMT03 | 10/100 Base TX Transformer Designed for general Chipsets |
| 20PMT04B | Single 10Base-T/100Base-TX Transformer Design for varied turn ratio on Tx side |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 20N0500 | 制造商:Distributed By MCM 功能描述:Pico/Micro .281'' x .093'' |
| 20N06HDT4 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 20N1000 | 制造商:Distributed By MCM 功能描述:Pico/Micro .281'' x .093'' |
| 20N1500 | 制造商:Distributed By MCM 功能描述:Pico/Micro .281'' x .093'' |
| 20N40 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:400V, 23A N-CHANNEL POWER MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。