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參數(shù)資料
| 型號(hào)： | 1N914 |
| 英文描述： | SILICON EPITAXIAL PLANAR DIODES |
| 中文描述： | 硅外延平面二極管 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | 1N914 |
1999 May 26
3
Philips Semiconductors
Product specication
High-speed diode
1N914
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 10 mA; see Fig.3
1
V
IR
reverse current
see Fig.5
VR =20V
25
nA
VR =75V
5
A
VR =20V; Tj = 150 °C50
A
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
4
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 ; measured at
IR = 1 mA; see Fig.7
8ns
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 ; measured at
IR = 1 mA; see Fig.7
4ns
Vfr
forward recovery voltage
when switched from IF = 50 mA; tr = 20 ns;
see Fig.8
2.5
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
Rth j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
500
K/W
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| 1N914 | HIGH SPEED SILICON SWITCHING DIODE |
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| 1N914UR | SWITCHING DIODE |
| 1N916 | HIGH SPEED SILICON SWITCHING DIODE |
| 1N935 | 9.0 VOLT NOMINAL ZENER VOLTAGE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N914,113 | 制造商:NXP Semiconductors 功能描述: |
| 1N914,143 | 制造商:NXP Semiconductors 功能描述: |
| 1N914 | 制造商:Fairchild Semiconductor Corporation 功能描述:DIODE SMALL SIGNAL DO-35 制造商:NXP Semiconductors 功能描述:DIODE SMALL SIGNAL DO-35 |
| 1N914.TR | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| 1N914/A52R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DIODE KLEINSIGNAL |
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