參數(shù)資料
型號(hào): 1JU42
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 1 A, 600 V, SILICON, SIGNAL DIODE
封裝: LEAD FREE, PLASTIC, 3-3F2A, 2 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 262K
代理商: 1JU42
1JU42
2006-11-07
2
Handling Precaution
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we recommend
when you design a circuit with a device.
VRRM: We recommend that the worst case voltage, including surge voltage, be no greater than 80% of the
absolute maximum rating of VRRM for a DC circuit and be no greater than 50% of that of VRRM for
an AC circuit. VRRM has a temperature coefficient of 0.1%/°C. Take this temperature coefficient into
account designing a device at low temperature.
IF(AV): We recommend that the worst case current be no greater than 80% of the absolute maximum rating
of IF(AV). Carry out adequate heat design. If you can’t design a circuit with excellent heat radiation,
set the margin by using an allowable Tamax-IF(AV) curve.
This rating specifies the non-repetitive peak current in one cycle of a 50-Hz sine wave, condition angle 180.
Therefore, this is only applied for an abnormal operation, which seldom occurs during the lifespan of the device.
We recommend that a device be used at a Tj of below 120°C under the worst load and heat radiation conditions.
Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When
using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value.
Please refer to the Rectifiers databook for further information.
相關(guān)PDF資料
PDF描述
1JU42 1 A, 600 V, SILICON, SIGNAL DIODE
1KAB100EL5 1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
1KAB40EL3 1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
1KAB40EL5 1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
1KAB10E 1.2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
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