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參數(shù)資料
| 型號： | YG832C03R |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | SCHOTTKY BARRIER DIODE |
| 中文描述： | 肖特基勢壘二極管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 52K |
| 代理商： | YG832C03R |
YG832C03R
(30V / 10A TO-22OF15)
Characteristics
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
o
C
o C
Tj=150
Tj=125
Tj=100
Tj=25
Forward Characteristic (typ.)
IF
Forward
Current
(A)
VF
Forward Voltage (V)
0
5
10
15
20
25
30
35
10
-3
10
-2
10
-1
10
0
10
1
10
2
Tj=150
o
C
Tj=25
o
C
Tj=100
o
C
Tj=125
o
C
Reverse Characteristic
(typ.)
IR
Reverse
Current
(mA)
VR
Reverse Voltage
(V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
Per 1element
DC
Square wave
λ=180
o
Sine wave
λ=180
o
Square wave
λ=120
o
Square wave
λ=60
o
Forward Power Dissipation
WF
Forward
Power
Dissipation
(W)
Io
Average Forward Current
(A)
360°
Io
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32
0
1
2
3
4
5
6
7
8
9
10
11
12
13
Reverse Power Dissipation
α=180
o
DC
PR
Reverse
Power
Dissipation
(W)
VR
Reverse Voltage
(V)
360°
VR
02
46
8
10
12
14
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
150
155
160
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave
λ=120 o
Square wave
λ=60 o
Square wave
λ=180 o
Sine wave
λ=180 o
DC
Current Derating (Io-Tc)
Tc
Case
Temperature
(
o
C)
Io
Average Output Current
(A)
10
100
10
100
1000
Junction Capacitance Characteristic
(typ.)
Cj
Junction
Capacitance
(pF)
VR
Reverse Voltage
(V)
360°
Io
VR=20V
λ
α
λ
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| YG832C03RSC-P | 制造商:Fuji Electric 功能描述: |
| YG832C04R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SCHOTTKY DIODE |
| YG835C03R | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:SCHOTTKY BARRIER DIODE |
| YG835C03R_01 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:SCHOTTKY BARRIER DIODE |
| YG835C03RSC-P | 制造商:Fuji Electric 功能描述: |
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