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參數(shù)資料
| 型號： | XP8081 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2) |
| 中文描述： | 20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | SC-88, 6 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 48K |
| 代理商： | XP8081 |
2
Composite Transistors
XP8081
I
Electrical Characteristics
(Ta=25C)
G
Tr1
G
Tr2
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
f
T
R
1
R
1
/R
2
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 10mA, I
B
= 0.3mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
V
CC
= 5V, V
B
= 3.5V, R
L
= 1k
V
CB
= 10V, I
E
= –1mA, f = 200MHz
50
V
Collector to emitter voltage
50
V
Collector cutoff current
0.1
μ
A
μ
A
0.5
Emitter cutoff current
0.1
mA
Forward current transfer ratio
80
Collector to emitter saturation voltage
0.25
V
Output voltage high level
4.9
V
Output voltage low level
0.2
V
Transition frequency
150
MHz
Input resistance
–30%
47
+30%
k
Resistance ratio
0.8
1.0
1.2
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate to drain voltage
V
GDS
I
DSS
I
GSS
V
GSC
gm
I
G
= –10
μ
A, V
DS
= 0
V
DS
= 10V, V
GS
= 0
V
GS
= –30V, V
DS
= 0
V
DS
= 10V, I
D
= 10
μ
A
V
DS
= 10V, I
D
= 1mA, f = 1kHz
V
DS
= 10mV, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
–50
V
Drain current
0.2
2.2
mA
Gate cutoff current
–10
nA
Gate to source cutoff voltage
–1.0
V
Mutual conductance
1.8
2.5
mS
Drain resistance
R
DS(on)
C
iss
C
rss
C
oss
400
Common source short-circuit input capacitance
7
pF
Common source reverse transfer capacitance
1.5
pF
Common source short-circuit output capacitance
1.5
pF
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