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參數(shù)資料
| 型號(hào)： | XP2501 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon NPN epitaxial planer transistor |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SMINI5-G1, SC-88A, 5 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 33K |
| 代理商： | XP2501 |
1
Composite Transistors
XP2501
Silicon NPN epitaxial planer transistor
For general amplification
I
Features
G
Two elements incorporated into one package.
(Base-coupled transistors)
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
2SD601A
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
5W
Internal Connection
1 : Emitter (Tr1)
2 : Base
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
2.1
±
0.1
1.25
±
0.1
0.425
0
±
0
2
±
0
0
1
2
3
4
5
0
±
0
±
0
0
0
0
+
–
0.2
±
0.1
0.425
0
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
60
V
Collector to emitter voltage
50
V
Emitter to base voltage
7
V
Collector current
100
mA
Peak collector current
200
mA
Total power dissipation
150
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 10V, I
C
= 2mA
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= –1mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
60
V
Collector to emitter voltage
50
V
Emitter to base voltage
7
V
Collector cutoff current
0.1
μ
A
μ
A
100
Forward current transfer ratio
160
460
Forward current transfer h
FE
ratio
h
FE
(small/large)
*1
V
CE(sat)
f
T
C
ob
0.5
0.99
Collector to emitter saturation voltage
0.1
0.3
V
Transition frequency
150
MHz
Collector output capacitance
3.5
pF
*1
Ratio between 2 elements
Tr2
Tr1
1
5
2
3
4
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