參數(shù)資料
型號： XP1D874
英文描述： Composite Device - Composite Transistors
中文描述： 復(fù)合設(shè)備-復(fù)合晶體管
文件頁數(shù)： 1/3頁
文件大小： 78K
代理商： XP1D874
1
Publication date: December 2003
SJJ00223BED
Composite Transistors
XP0D873
(XP1D873)
Silicon N-channel junction FET
For analog switching
■
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
2SK1103
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Internal Connection
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Gate-drain surrender voltage
V
GDS
I
C
=
10
μ
A, V
DS
=
0
V
DS
=
10 V, V
GS
=
0
V
GS
=
30 V, V
DS
=
0
V
DS
=
10 V, I
D
=
10
μ
A
V
DS
=
10 mV, V
GS
=
0
V
DS
=
10 V, I
D
=
1 mA, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
50
V
Drain-source cutoff current
I
DSS
I
GSS
0.2
6.0
mA
Gate-source cutoff current
10
3.5
nA
Gate-source cutoff voltage
V
GSC
1.5
V
Drain-source ON resistance
R
DS(on)
gm
300
Mutual conductance
1.8
2.5
mS
Short-circuit forward transfer
capacitance (Common-source)
C
iss
7
pF
Short-circuit output capacitance
(Common-source)
C
oss
1.5
pF
Reverse transfer capacitance
(Common-source)
C
rss
1.5
pF
Marking Symbol: OC
Parameter
Symbol
Rating
Unit
Gate-drain surrender voltage
V
GDS
I
D
50
V
Drain current
30
mA
Gate current
I
G
10
mA
Total power dissipation
P
T
T
ch
150
mW
Channel temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
3
4
FET1
FET2
1
2
5
Note) The part number in the parenthesis shows conventional part number.
2
±
0
0
+
–
0
±
0
0
1
±
0
1
3
2
0.20
±
0.05
0
1.3
±
0.1
2.0
±
0.1
5
4
0.65
0.65
0
±
0
0.12
+0.05
5
10
1: Source (FET1)
2: Drain
3: Source (FET2)
EIAJ: SC-88A
4: Gate (FET2)
5: Gate (FET1)
SMini5-G1 Package
Note)
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
相關(guān)PDF資料
PDF描述
XP0D874(XP1D874) Composite Device - Composite Transistors
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