參數(shù)資料
型號(hào): XP161A11A1PR
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: Power MOS FET
中文描述: 功率MOS場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 58K
代理商: XP161A11A1PR
u
N
N-Channel Power MOS FET
N
DMOS Structure
N
Low On-State Resistance: 0.105
MAX
N
Gate Protect Diode Built-in
N
Ultra High-Speed Switching
N
SOT-89 Package
I
Applications
G
Notebook PCs
G
Cellular and portable phones
G
On-board power supplies
G
Li-ion battery systems
I
General Description
The XP161A11A1PR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-89 package makes high density mounting possible.
I
Features
Low on-state resistance:
Rds(on)=0.065
(Vgs=10V)
Rds(on)=0.105
(Vgs=4.5V)
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage:
4.5V
High density mounting:
SOT-89
I
Absolute Maximum Ratings
I
Equivalent Circuit
I
Pin Configuration
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
When implemented on a ceramic PCB
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
30
±
20
4
16
4
2
150
-55~150
V
V
A
A
A
W
:
:
SYMBOL
RATINGS
UNITS
I
Pin Assignment
PIN
NUMBER
PIN
NAME
FUNCTION
1
3
2
G
S
D
Gate
Source
Drain
Ta=25
:
Note:
1
3
2
N-Channel MOS FET
(1 device built-in)
1
G
3
S
2
D
SOT-89
(TOP VIEW)
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