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參數(shù)資料
| 型號(hào)： | XP134A1275SR |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | P-Channel Power MOS FET |
| 中文描述： | P溝道功率MOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 156K |
| 代理商： | XP134A1275SR |
784
11
DC Characteristics
Ta=25
O
C
UNITS
μ
A
μ
A
V
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
Drain Cut-off Current
Gate-Source Leakage Current
Idss
Igss
Vds = - 20V , Vgs = 0V
Vgs =
±
12V , Vds = 0V
Id = -1mA , Vds = - 10V
- 10
±
1
Gate-Source Cut-off Voltage
Vgs (off )
- 0.5
- 1.2
Drain-Source On-state Resistance
( note )
Id = - 2.5A , Vgs = - 4.5V
0.062
0.095
0.075
0.115
Id = - 2.5A , Vgs = - 2.5V
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
( note ) : Effective during pulse test.
Dynamic Characteristics
Ta=25
O
C
UNITS
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
Input Capacitance
Ciss
770
pF
Output Capacitance
Coss
Crss
Vds = - 10V , Vgs = 0V
440
pF
pF
Feedback Capacitance
f = 1 MHz
190
Switching Characteristics
Ta=25
O
C
UNITS
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
Turn-on Delay Time
td ( on )
15
ns
Rise Time
tr
Vgs = - 5V , Id = - 2.5A
20
ns
Turn-off Delay Time
td ( off )
Vdd = - 10V
55
ns
ns
Fall Time
tf
30
Thermal Characteristics
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Thermal Resistance
Implement on a glass epoxy
( channel-ambience )
resin PCB
Id = - 2.5A , Vds = - 10V
| Yfs |
Rds ( on )
S
7.5
O
C / W
62.5
Rth ( ch-a )
Vf
If = - 4.5A , Vgs = 0V
V
- 0.85
- 1.1
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