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參數(shù)資料
| 型號： | XP1022-QF |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN |
| 中文描述： | 17.0-25.0千兆赫的GaAs MMIC功率放大器，QFN封裝 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 878K |
| 代理商： | XP1022-QF |
17.0-25.0 GHz GaAs MMIC
Power Amplifier, QFN
November 2006 - Rev 15-Nov-06
P1022-QF
Page 5 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
App Note [1] Biasing -
It is recommended to separately bias each amplifier stage Vd1 through Vd3 at Vd(1,2,3)=5.0V with Id1=100mA, Id2=200mA
and Id3=400mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will alter the
effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain
current Id(total)=700 mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this
gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a
single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of
the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.7V. Typically the
gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is
available before applying the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or
drains are tied together) of DC bias pads.
For Individual Stage Bias (Recommended for saturated applications) -
Each DC pad (Vd1,2,3 and Vg1,2,3) needs to have DC bypass capacitance
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
10 nF
10 nF
10 nF
10 nF
10 nF
10 nF
100 PF
100 PF
100 PF
RF IN
RF OUT
50 Ohm Line
50 Ohm Line
1 M Ohm
1 M ohm
VD1
+5 V
VD2
VD3
VG1
VG2
VG3
V_DET
V_REF
XP1022-QF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XP1022-QF-0N00 | 17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1022-QF-EV1 | 17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1023-BD | 24.0-34.0 GHz GaAs MMIC Power Amplifier |
| XP1023-BD-000V | 24.0-34.0 GHz GaAs MMIC Power Amplifier |
| XP1023-BD-EV1 | 24.0-34.0 GHz GaAs MMIC Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP1022-QF-0N00 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1022-QF-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1023-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:24.0-34.0 GHz GaAs MMIC Power Amplifier |
| XP1023-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:24.0-34.0 GHz GaAs MMIC Power Amplifier |
| XP1023-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:24.0-34.0 GHz GaAs MMIC Power Amplifier |
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