- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385954 > XP1020-QE (Mimix Broadband, Inc.) 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN PDF資料下載
參數(shù)資料
| 型號： | XP1020-QE |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN |
| 中文描述： | 11.0-19.0千兆赫的GaAs MMIC功率放大器，QFN封裝 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 191K |
| 代理商： | XP1020-QE |
11.0-19.0 GHz GaAs MMIC
Power Amplifier, QFN
Page 4 of 6
App Note [1] Biasing
-
It is recommended to bias the amplifier with Vd=5.0V and Id=380mA. It is also recommended to use active
biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on
the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power
operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is
controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.9V. Typically the
gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative
gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement
-
Each DC pin (Vd and Vg) needs to have DC bypass capacitance (~0.01 uF) as close to the package as possible.
MTTF Graphs
P1020-QE
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2007 - Rev 26-Jan-07
XP1020-QE Vd=5.0 V, Id=380 mA
1.00E+03
1.00E+04
1.00E+05
1.00E+06
1.00E+07
1.00E+08
55
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
M
No RF
Pout=+27 dBm
XP1020-QE Vd=5.0 V, Id=380 mA
1.00E+00
1.00E+01
1.00E+02
1.00E+03
1.00E+04
1.00E+05
1.00E+06
55
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
F
No RF
Pout=+27 dBm
XP1020-QE Vd=5.0 V, Id=380 mA
55
57
59
61
63
65
67
69
71
73
75
77
79
81
83
85
87
89
91
93
95
55
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
R
No RF
Pout=+27 dBm
XP1020-QE Vd=5.0 V, Id=380 mA
150
175
200
225
250
275
300
55
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
T
No RF
Pout=+27 dBm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XP1020-QE-0N00 | 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1020-QE-EV1 | 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1021-BD | 17.0-22.0 GHz GaAs MMIC Power Amplifier |
| XP1021-BD-000V | 17.0-22.0 GHz GaAs MMIC Power Amplifier |
| XP1021-BD-EV1 | 17.0-22.0 GHz GaAs MMIC Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP1020-QE-0N00 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1020-QE-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1021-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:17.0-22.0 GHz GaAs MMIC Power Amplifier |
| XP1021-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:17.0-22.0 GHz GaAs MMIC Power Amplifier |
| XP1021-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:17.0-22.0 GHz GaAs MMIC Power Amplifier |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。