- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385954 > XP1020-BD (Mimix Broadband, Inc.) 11.0-19.0 GHz GaAs MMIC Power Amplifier PDF資料下載
參數(shù)資料
| 型號： | XP1020-BD |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 11.0-19.0 GHz GaAs MMIC Power Amplifier |
| 中文描述： | 11.0-19.0 GHz的砷化鎵單片功率放大器 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 318K |
| 代理商： | XP1020-BD |
Page 4 of 6
App Note [1] Biasing
-
It is recommended to bias each amplifier stage Vd(1,2)=5.0V with Id=380mA. It is also recommended to use
active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results.
Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low
power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT
is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.9V. Typically the
gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative
gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement
-
All the drain or gate pad (Vd1,2 and Vg) DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance
(~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads.
MTTF Graphs
11.0-19.0 GHz GaAs MMIC
Power Amplifier
P1020-BD
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2007 - Rev 30-Jan-07
XP1020-BD Vd=5.0 V, Id=380 mA
1.00E+03
1.00E+04
1.00E+05
1.00E+06
1.00E+07
1.00E+08
1.00E+09
55
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
M
No RF
Pout=+27 dBm
XP1020-BD Vd=5.0 V, Id=380 mA
1.00E+00
1.00E+01
1.00E+02
1.00E+03
1.00E+04
1.00E+05
55
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
F
No RF
Pout=+27 dBm
XP1020-BD Vd=5.0 V, Id=380 mA
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
74
76
78
80
55
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
R
No RF
Pout=+27 dBm
XP1020-BD Vd=5.0 V, Id=380 mA
125
150
175
200
225
250
275
55
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
T
No RF
Pout=+27 dBm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XP1020-BD-000V | 11.0-19.0 GHz GaAs MMIC Power Amplifier |
| XP1020-BD-EV1 | 11.0-19.0 GHz GaAs MMIC Power Amplifier |
| XP1020-QE | 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1020-QE-0N00 | 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1020-QE-EV1 | 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP1020-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:11.0-19.0 GHz GaAs MMIC Power Amplifier |
| XP1020-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:11.0-19.0 GHz GaAs MMIC Power Amplifier |
| XP1020-QE | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1020-QE-0N00 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1020-QE-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。