參數(shù)資料
型號: XP1019-BD-EV1
廠商: Mimix Broadband, Inc.
英文描述: 17.0-24.0 GHz GaAs MMIC Power Amplifier
中文描述: 17.0-24.0 GHz的砷化鎵單片功率放大器
文件頁數(shù): 4/8頁
文件大?。?/td> 744K
代理商: XP1019-BD-EV1
Page 4 of 8
Mechanical Drawing
Bias Arrangement
Bypass Capacitors
- See App Note [2]
(Note: Engineering designator is 20MPA0723)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads (except Vd3) are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads (and Vd3) are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 2.07 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd1)
Bond Pad #3 (Vd2)
Bond Pad #4 (Vd3)
Bond Pad #5 (RF Out)
Bond Pad #6 (Ref)
Bond Pad #7 (Vdet)
Bond Pad #8 (Det)
Bond Pad #9 (Vg3)
Bond Pad #10 (Vg2)
Bond Pad #11 (Vg1)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-24.0 GHz GaAs MMIC
Power Amplifier
1.330
(0.052)
1
2
3
4
5
6
7
8
10
0.840
(0.033)
1.334
(0.053)
1.788
(0.070)
2.400
(0.094)
2.236
(0.088)
1.930
(0.076)
9
1.650
(0.065)
0.947
(0.037)
0.0
0.0
0.683
(0.027)
0.683
(0.027)
11
0.588
(0.023)
2.510
(0.099)
1
2
3
4
5
6
7
8
10
9
11
RF In
Vg1
RF Out
Vg2
Vd1
Vd2
Vd3
Vg3
Det
Vdet
Ref
July 2006 - Rev 30-Jul-06
P1019-BD
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XP1020-QE 制造商:MIMIX 制造商全稱:MIMIX 功能描述:11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN
XP1020-QE-0N00 制造商:MIMIX 制造商全稱:MIMIX 功能描述:11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN