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參數(shù)資料
| 型號： | XP1000 |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 17.0-24.0 GHz GaAs MMIC Power Amplifier |
| 中文描述： | 17.0-24.0 GHz的砷化鎵單片功率放大器 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 970K |
| 代理商： | XP1000 |
17.0-24.0 GHz GaAs MMIC
Power Amplifier
Page 4 of 6
Detector Curves
App Note [1] Biasing
- As shown in the bonding diagram, it is recommended to separately bias the upper and lower amplifiers at
Vd(1+2)=5.5V Id(1+2)=215mA, and Vd(3+4)=5.5V Id(3+4)=215mA, although best performance will result in separately biasing Vd1 through
Vd4, with Id1=Id3=71mA, Id2=Id4=144mA. It is also recommended to use active biasing to keep the currents constant as the RF power and
temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints,
the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used
to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage
needed to do this is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the
applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] On-board Detector
- The output signal of the power amplifier is coupled via a 15dB directional coupler to a detector, which
comprises a diode connected to the signal path, and a second diode used to provide a temperature compensation signal. The common bias
terminal is Vd5, and is nominally set to forward bias both diodes. The bias is normally provided in 1 of 2 ways. The Vd5 port can be connected
directly to a 1V bias, and given the internal series resistance, results in about 1mA of bias current. Alternatively, Vd5 can be tied to the same
voltage as Vd1-Vd4 through an external series resistor Rd in the range 3 - 6k
.
App Note [3] Bias Arrangement
-
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if
gate or drains are tied together) of DC bias pads.
For Individual Stage Bias (Recommended for Saturated Applications) -- Each DC pad (Vd1,2,3,4 and Vg1,2,3,4)needs to have DC bypass
capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
Typical Detector Characteristic
Total Output Power, dBm
2 tones each at 3dB below total output
D
0.350
0.300
0.250
0.200
0.150
0.100
0.050
0.000
12 13 14 15 16 17 18 19 20 21 22 23
-
-
-
-
-
-
-
-
-
-
(LOG) Typical Detector Characteristic
Total Output Power, dBm
2 tones each at 3dB below total output
D
1.000
0.100
0.010
0.001
12 13 14 15 16 17 18 19 20 21 22 23
-
-
-
-
-
-
-
-
-
-
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
127 deg Celsius
147 deg Celsius
167 deg Celsius
FITs
1.70E+00
9.71E+00
7.04E+01
MTTF Hours
9.11E+08
1.03E+08
1.42E+07
Rth
-
30.1
°
C/W
-
Bias Conditions:
Vd1=Vd2=Vd3=Vd4=5.5V, Id1=Id3=71 mA, Id2=Id4=144 mA
P1000
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2005 - Rev 05-May-05
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP1001 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:26.0-40.0 GHz GaAs MMIC Power Amplifier |
| XP1001000-01 | 功能描述:以太網(wǎng)模塊 XPORT XE WITHO RoHS:否 制造商:Lantronix 產(chǎn)品:Device Servers 數(shù)據(jù)速率:300 bps to 921.6 kbps, 10 Mbps, 100 Mbps 接口類型:Ethernet, Serial 工作電源電壓:5 V to 15 V 工作電源電流:133 mA to 400 mA 最大工作溫度:+ 70 C |
| XP100-1000-03 | 制造商:Lantronix Inc 功能描述:Serial to Ethernet Server CMOS Technology 10Mbps/100Mbps |
| XP1001000-03 | 功能描述:以太網(wǎng)模塊 XPORT XE - STANDARD NO ENCRYPTION RoHS:否 制造商:Lantronix 產(chǎn)品:Device Servers 數(shù)據(jù)速率:300 bps to 921.6 kbps, 10 Mbps, 100 Mbps 接口類型:Ethernet, Serial 工作電源電壓:5 V to 15 V 工作電源電流:133 mA to 400 mA 最大工作溫度:+ 70 C |
| XP1001000-03R | 功能描述:以太網(wǎng)模塊 XPort XE Ext. Temp without Encryption RoHS:否 制造商:Lantronix 產(chǎn)品:Device Servers 數(shù)據(jù)速率:300 bps to 921.6 kbps, 10 Mbps, 100 Mbps 接口類型:Ethernet, Serial 工作電源電壓:5 V to 15 V 工作電源電流:133 mA to 400 mA 最大工作溫度:+ 70 C |
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