- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄372922 > XP06435(XP6435) 複合デバイス － 複合トランジスタ PDF資料下載
參數(shù)資料
| 型號： | XP06435(XP6435) |
| 英文描述： | 複合デバイス － 複合トランジスタ |
| 中文描述： | 複合デバイス-複合トランジスタ |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 58K |
| 代理商： | XP06435(XP6435) |
1
Composite Transistors
XP06401
(XP6401)
Silicon PNP epitaxial planer transistor
For general amplification
I
Features
G
Two elements incorporated into one package.
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
2SB0709A(2SB709A)
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
5O
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
–60
V
Collector to emitter voltage
–50
V
Emitter to base voltage
–7
V
Collector current
–100
mA
Peak collector current
–200
mA
Total power dissipation
150
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
I
C
= –10
μ
A, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CB
= –20V, I
E
= 0
V
CE
= –10V, I
B
= 0
V
CE
= –10V, I
C
= –2mA
V
CE
= –10V, I
C
= –2mA
I
C
= –100mA, I
B
= –10mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–60
V
Collector to emitter voltage
–50
V
Emitter to base voltage
–7
V
Collector cutoff current
– 0.1
μ
A
μ
A
–100
Forward current transfer ratio
160
460
Forward current transfer h
FE
ratio
h
FE
(small/large)
*1
V
CE(sat)
f
T
C
ob
0.5
0.99
Collector to emitter saturation voltage
– 0.3
– 0.5
V
Transition frequency
80
MHz
Collector output capacitance
2.7
pF
1 : Emitter (Tr1)
2 : Emitter (Tr2)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Collector (Tr1)
EIAJ : SC–88
SMini6-G1 Package
5
°
10
°
2
±
1
±
1
3
2
0.2
±0.05
0.12
+0.05
0
±
(
1.3
±0.1
2.0
±0.1
0
0
±
0
+
–
6
5
4
(0.65) (0.65)
1
6
5
Tr2
Tr1
2
3
4
*1
Ratio between 2 elements
Note) The Part number in the Parenthesis shows conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XP0A554 | TRANSISTOR | BJT | PAIR | NPN | 100MA I(C) | SOT-363 |
| XP0C301(XP1C301) | 複合デバイス － 複合トランジスタ |
| XP0D873 | Composite Device - Diodes - Composite Diodes |
| XP1D873 | Composite Device - Diodes - Composite Diodes |
| XP0D874 | Composite Device - Composite Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP06501 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 100MA I(C) | SOT-363 |
| XP06501(XP6501) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 複合トランジスタ |
| XP0650100L | 功能描述:TRANS ARRAY NPN/NPN SMINI-6P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| XP0650X05XA_D5X WAF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。