參數(shù)資料
型號(hào)： XP04111
廠商： PANASONIC CORP
元件分類： 小信號(hào)晶體管
英文描述： Silicon PNP epitaxial planar type
中文描述： 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, SMINI6-G1, SC-88, 6 PIN
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 87K
代理商： XP04111
1
Publication date: March 2004
SJJ00161BED
Composite Transistors
XP04111
(XP4111)
Silicon PNP epitaxial planar type
For switching/digital circuits
■
Features
Two elements incorporated into one package
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
UNR2111 (UN2111)
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Internal Connection
Marking Symbol: 9U
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
50
50
V
Collector-emitter voltage (Base open)
V
CEO
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
0.1
0.5
0.5
μ
A
μ
A
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
I
EBO
mA
Forward current transfer ratio
h
FE
35
Collector-emitter saturation voltage
V
CE(sat)
0.25
V
Output voltage high-level
V
OH
4.9
V
Output voltage low-level
V
OL
R
1
0.2
+
30%
V
Input resistance
30%
10
k
Resistance ratio
R
1
/ R
2
0.8
1.0
1.2
Transition frequency
f
T
V
CB
=
10 V, I
E
=
1 mA, f
=
200 MHz
80
MHz
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
4
Tr1
Tr2
5
6
1
3
2
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ : SC-88
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SMini6-G1 Package
5
10
2
±
0
1
±
0
1
3
2
0.2
±
0.05
0.12
+0.05
0
±
0
(
1.3
±
0.1
2.0
±
0.1
0
0
±
0
0
+
–
6
5
4
(0.65) (0.65)
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
50
100
V
Collector-emitter voltage (Base open)
V
CEO
I
C
V
Collector current
mA
Total power dissipation
P
T
150
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
XP04111(XP4111) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Composite Transistors
XP0411100L 功能描述:TRANS ARRAY PNP/PNP W/RES S MINI RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:1 個(gè) NPN，1 個(gè) PNP - 預(yù)偏壓式（雙） 電流 - 集電極 (Ic)（最大）:70mA，100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k，2.2k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz，200MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000784046
XP04112 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor
XP04112(XP4112) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Composite Transistors
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