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參數(shù)資料
| 型號： | XP01214 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer transistor |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SMINI5-G1, SC-88A, 5 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 32K |
| 代理商： | XP01214 |
1
Composite Transistors
XP1214
Silicon NPN epitaxial planer transistor
For switching/digital circuits
I
Features
G
Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
UN1214
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
Unit: mm
Marking Symbol:
9H
Internal Connection
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
50
V
Collector to emitter voltage
50
V
Collector current
100
mA
Total power dissipation
150
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 10V, I
C
= 5mA
V
CE
= 10V, I
C
= 5mA
I
C
= 10mA, I
B
= 0.3mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k
V
CB
= 10V, I
E
= –2mA, f = 200MHz
50
V
Collector to emitter voltage
50
V
Collector cutoff current
0.1
μ
A
μ
A
0.5
Emitter cutoff current
0.2
mA
Forward current transfer ratio
80
Forward current transfer h
FE
ratio
h
FE
(small/large)
*1
V
CE(sat)
V
OH
V
OL
f
T
R
1
R
1
/R
2
0.5
0.99
Collector to emitter saturation voltage
0.25
V
Output voltage high level
4.9
V
Output voltage low level
0.2
V
Transition frequency
150
MHz
Input resistance
–30%
10
+30%
k
Resistance ratio
0.17
0.21
0.25
*1
Ratio between 2 elements
1 : Base (Tr1)
2 : Emitter
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
2.1
±
0.1
1.25
±
0.1
0.425
0
±
0
2
±
0
0
1
2
3
4
5
0
±
0
±
0
0
0
0
+
–
0.2
±
0.1
0.425
0
1
5
Tr2
Tr1
2
3
4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP01214(XP1214) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 複合トランジスタ |
| XP0121400L | 功能描述:TRANS ARRAY NPN/NPN W/RES S MINI RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:1 個 NPN，1 個 PNP - 預(yù)偏壓式（雙） 電流 - 集電極 (Ic)（最大）:70mA，100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k，2.2k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz，200MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000784046 |
| XP01215 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-88A |
| XP01215(XP1215) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Composite Transistors |
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