參數(shù)資料
型號(hào)： XN4609
廠(chǎng)商： PANASONIC CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： Silicon NPN(PNP) epitaxial planer transistor
中文描述： 500 mA, 20 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, MINI6-G1, SC-74, 6 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 63K
代理商： XN4609
2
Composite Transistors
XN4609
I
Electrical Characteristics
(Ta=25C)
G
Tr1
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on*2
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 25V, I
E
= 0
V
CE
= 2V, I
C
= 0.5A
*1
V
CE
= 2V, I
C
= 1A
*1
I
C
= 0.5A, I
B
= 20mA
I
C
= 0.5A, I
B
= 20mA
25
V
Collector to emitter voltage
20
V
Emitter to base voltage
12
V
Collector cutoff current
0.1
μ
A
Forward current transfer ratio
200
800
60
Collector to emitter saturation voltage
0.13
0.4
V
Base to emitter saturation voltage
1.2
V
Transition frequency
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
200
MHz
Collector output capacitance
10
pF
ON Resistance
1.0
G
Tr2
*1
Pulse measurement
*2
R
on
test circuit
V
B
I
B
=1mA
R
on
= V
1000(
)
A
–V
B
f=1kHz
V=0.3V
1k
V
A
V
V
V
B
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
I
C
= –10
μ
A, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CB
= –20V, I
E
= 0
V
CE
= –10V, I
E
= 0
V
CE
= –10V, I
C
= –2mA
I
C
= –100mA, I
B
= –10mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–60
V
Collector to emitter voltage
–50
V
Emitter to base voltage
–7
V
Collector cutoff current
– 0.1
μ
A
μ
A
–100
Forward current transfer ratio
160
460
Collector to emitter saturation voltage
– 0.3
V
Transition frequency
80
MHz
Collector output capacitance
2.7
pF
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