- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375037 > XN4312 (PANASONIC CORP) Silicon NPN(PNP) epitaxial planer transistor PDF資料下載
參數(shù)資料
| 型號： | XN4312 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN(PNP) epitaxial planer transistor |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINI6-G1, SC-74, 6 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 109K |
| 代理商： | XN4312 |
XN04312
2
SJJ00062BED
Tr2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Tr1
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
0
160
40
120
80
0
500
200
400
100
300
T
T
Ambient temperature T
a
(
°
C)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
50
50
V
Collector-emitter voltage (Base open)
V
CEO
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
I
EBO
0.1
0.5
0.2
μ
A
μ
A
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
mA
Forward current transfer ratio
h
FE
60
Collector-emitter saturation voltage
V
CE(sat)
V
OH
0.25
V
Output voltage high-level
4.9
V
Output voltage low-level
V
OL
0.2
+
30%
V
Input resistance
R
1
30%
22
k
Resistance ratio
R
1
/ R
2
0.8
1.0
1.2
Transition frequency
f
T
V
CB
=
10 V, I
E
=
1 mA, f
=
200 MHz
80
MHz
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
50
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
0.5
Emitter-base cutoff current (Collector open)
I
EBO
0.2
mA
Forward current transfer ratio
h
FE
60
Collector-emitter saturation voltage
V
CE(sat)
0.25
V
Output voltage high-level
V
OH
4.9
V
Output voltage low-level
V
OL
R
1
0.2
V
Input resistance
30%
22
+
30%
k
Resistance ratio
R
1
/ R
2
0.8
1.0
1.2
Transition frequency
f
T
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
150
MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XN4316 | Silicon NPN(PNP) epitaxial planer transistor |
| XN04316 | Silicon NPN(PNP) epitaxial planer transistor |
| XN431L | Silicon NPN(PNP) epitaxial planer transistor |
| XN4322 | Silicon NPN(PNP) epitaxial planer transistor |
| XN4381 | Silicon NPN(PNP) epitaxial planer transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XN4314 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN(PNP) epitaxial planer transistor |
| XN4315 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN(PNP) epitaxial planer transistor |
| XN4316 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN(PNP) epitaxial planer transistor |
| XN431L | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN(PNP) epitaxial planer transistor |
| XN4322 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Composite Transistors Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。