參數(shù)資料
型號: XN4116
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planer transistor
中文描述: 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, MINI6-G1, SC-74, 6 PIN
文件頁數(shù): 1/2頁
文件大小: 33K
代理商: XN4116
1
Composite Transistors
XN4116
Silicon PNP epitaxial planer transistor
For switching/digital circuits
I
Features
G
Two elements incorporated into one package.
(Transistors with built-in resistor)
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
UN1116
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Unit: mm
Marking Symbol:
6U
Internal Connection
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
–50
V
Collector to emitter voltage
–50
V
Collector current
–100
mA
Total power dissipation
300
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
f
T
R
1
I
C
= –10
μ
A, I
E
= 0
I
C
= –2mA, I
B
= 0
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
V
EB
= –6V, I
C
= 0
V
CE
= –10V, I
C
= –5mA
I
C
= –10mA, I
B
= – 0.3mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1k
V
CC
= –5V, V
B
= –2.5V, R
L
= 1k
V
CB
= –10V, I
E
= 1mA, f = 200MHz
–50
V
Collector to emitter voltage
–50
V
Collector cutoff current
– 0.1
μ
A
μ
A
– 0.5
Emitter cutoff current
– 0.01
mA
Forward current transfer ratio
160
460
Collector to emitter saturation voltage
– 0.25
V
Output voltage high level
–4.9
V
Output voltage low level
– 0.2
V
Transition frequency
80
MHz
Input resistance
–30%
4.7
+30%
k
2.8
+0.2
–0.3
1.5
0.65
±
0.15
0.65
±
0.15
1
6
5
4
3
2
1
±
0
0
0
1
±
0
+0.25
0
+
0
+
2
+
1
+
0
0.4
±
0.2
0
0
+
0.1 to 0.3
6
Tr2
Tr1
5
4
3
2
1
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