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參數(shù)資料
| 型號(hào)： | XN2216 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon NPN epitaxial planer transistor |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MINI5-G1, SC-74A, 5 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 32K |
| 代理商： | XN2216 |
1
Composite Transistors
XN2216
Silicon NPN epitaxial planer transistor
For switching/digital circuits
I
Features
G
Two elements incorporated into one package.
(Base-coupled transistors with built-in resistor)
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
UN1216
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Emitter (Tr2)
4 : Base
5 : Emitter (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Unit: mm
Marking Symbol:
BA
Internal Connection
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
50
V
Collector to emitter voltage
50
V
Collector current
100
mA
Total power dissipation
300
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
2.8
+0.2
-
0.3
1.5
0.65
±
0.15
0.65
±
0.15
1
5
4
3
2
1
±
0
0
0
1
±
0
0
+0.25
-
0.05
0
+
-
0
0
0
+
-
0
2
+
-
0
1
+
-
0
0.4
±
0.2
0.1 to 0.3
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 10V, I
C
= 5mA
V
CE
= 10V, I
C
= 5mA
I
C
= 10mA, I
B
= 0.3mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k
50
V
Collector to emitter voltage
50
V
Collector cutoff current
0.1
μ
A
μ
A
0.5
Emitter cutoff current
0.01
mA
Forward current transfer ratio
160
460
Forward current transfer h
FE
ratio
h
FE
(small/large)
*1
V
CE(sat)
V
OH
V
OL
R
1
f
T
0.5
0.99
Collector to emitter saturation voltage
0.25
V
Output voltage high level
4.9
V
Output voltage low level
0.2
V
Input resistance
–30%
4.7
+30%
k
Transition frequency
V
CB
= 10V, I
E
= –2mA, f = 200MHz
150
MHz
*1
Ratio between 2 elements
1
Tr2
Tr1
2
3
4
5
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