- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375037 > XN1872 (PANASONIC CORP) Silicon N-channel . Enhancement MOS FET PDF資料下載
參數(shù)資料
| 型號： | XN1872 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon N-channel . Enhancement MOS FET |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, MINI5-G1, SC-74A, 5 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 32K |
| 代理商： | XN1872 |
1
Composite Transistors
XN1872
Silicon N-channel
Enhancement MOS FET
For switching
I
Features
G
Two elements incorporated into one package.
(Source-coupled FETs)
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
2SK621
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
1 : Drain (Tr1)
2 : Drain (Tr2)
3 : Gate (Tr2)
4 : Source
5 : Gate (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Unit: mm
Marking Symbol:
5U
Internal Connection
Parameter
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSO
I
D
I
DM
P
T
T
ch
T
stg
50
V
Gate to source voltage
8
V
Drain current
100
mA
200
mA
Total power dissipation
300
mW
Channel temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
2.8
+0.2
-
0.3
1.5
0.65
±
0.15
0.65
±
0.15
1
5
4
3
2
1
±
0
0
0
1
±
0
0
+0.25
-
0.05
0
+
-
0
0
0
+
-
0
2
+
-
0
1
+
-
0
0.4
±
0.2
0.1 to 0.3
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to source voltage
V
DSS
I
DSS
I
GSS
V
th
R
DS(on)
| Y
fs
|
V
OH
V
OL
R
1
+R
2*1
t
on*2
t
off*2
C
iss
I
D
= 100
μ
A, V
GS
= 0
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100
μ
A, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DS
= 5V, V
GS
= 1V, R
L
= 200
V
DS
= 5V, V
GS
= 5V, R
L
= 200
50
V
Drain current
10
μ
A
μ
A
Gate cutoff current
40
80
Gate threshold voltage
1.5
3.5
V
Drain resistance
50
Forward transfer admittance
20
30
mS
Output voltage high level
4.5
V
Output voltage low level
1.0
V
Input resistance
100
200
k
μ
s
μ
s
Turn-on time
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200
V
DS
= 5V, V
GS
= 0, f = 1MHz
1.0
Turn-off time
1.0
Common source short-circuit input capacitance
9
15
pF
5
FET 2
FET 1
4
3
2
1
*1
Pulse measurement
*2
Resistance ratio R
1
/R
2
= 1/50
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XN1A312 | Silicon NPN(PNP) epitaxial planer transistor |
| XN1B301 | Silicon PNP(NPN) epitaxial planer transistor |
| XN1C301 | Silicon PNP(NPN) epitaxial planer transistor |
| XN1D873 | Silicon N-channel junction FET |
| XN2210 | Silicon NPN epitaxial planer transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XN1A311 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Composite Transistors |
| XN1A312 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN(PNP) epitaxial planer transistor |
| XN-1AO-I | 制造商:Moeller Electric Corporation 功能描述:1 ANALOG OUTPUT PLUG-IN MODULE 0-20MA OR 4-20MA |
| XN1B301 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| XN1C301 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP(NPN) epitaxial planer transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。