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參數(shù)資料
| 型號： | XN1601 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復合設備-復合晶體管 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 135K |
| 代理商： | XN1601 |
XN01601
3
SJJ00033BED
Characteristics charts of Tr1
I
C
V
CE
I
C
I
B
I
B
V
BE
I
C
V
BE
V
CE(sat)
I
C
h
FE
I
C
f
T
I
E
C
ob
V
CB
NF
I
E
0
0
4
8
12
16
60
50
40
30
20
10
C
C
Collector-emitter voltage V
CE
(V)
T
a
=
25
°
C
I
B
=
300
μ
A
250
μ
A
200
μ
A
150
μ
A
100
μ
A
50
μ
A
0
0
100
Base current I
B
(
μ
A)
200
300
400
60
50
40
30
20
10
C
C
V
CE
=
5 V
T
a
= 25
°
C
0
0
0.4
0.8
1.2
1.6
400
350
300
250
200
150
100
50
Base-emitter voltage V
BE
(V)
B
B
μ
A
V
CE
=
–5 V
T
a
=
25
°
C
0
0
2.0
1.6
1.2
0.8
0.4
240
200
160
120
80
40
Base-emitter voltage V
BE
(V)
C
C
V
CE
=
5 V
T
a
=
75
°
C
25
°
C
25
°
C
C
C
Collector current I
C
(mA)
10
3
1
10
2
10
1
1
10
10
10
2
10
3
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
600
500
400
300
200
100
F
F
Collector current I
C
(mA)
1
10
10
2
10
3
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
0
10
1
40
80
120
160
140
100
60
20
T
T
Emitter current I
E
(mA)
1
10
10
2
V
CB
=
10 V
T
a
=
25
°
C
0
8
7
6
5
4
3
2
1
C
o
Collector-base voltage V
CB
(V)
1
10
10
2
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
0
10
2
6
5
4
3
2
1
N
Emitter current I
E
(mA)
10
1
1
10
V
CB
=
5 V
f
=
1 kHz
R
g
=
2 k
T
a
=
25
°
C
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|---|---|
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| XN1A311 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Composite Transistors |
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