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參數(shù)資料
| 型號： | XN111M |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP epitaxial planer transistor |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINI5-G1, SC-74A, 5 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 34K |
| 代理商： | XN111M |
1
Composite Transistors
XN111M
PNP epitaxial planer transistor
For switching/digital circuits
I
Features
G
Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
UN211M
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Unit: mm
Marking Symbol:
EK
Internal Connection
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
–50
V
Collector to emitter voltage
–50
V
Collector current
–100
mA
Total power dissipation
300
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
2.8
+0.2
-
0.3
1.5
0.65
±
0.15
0.65
±
0.15
1
5
4
3
2
1
±
0
0
0
1
±
0
0
+0.25
-
0.05
0
+
-
0
0
0
+
-
0
2
+
-
0
1
+
-
0
0.4
±
0.2
0.1 to 0.3
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
I
C
= –10
μ
A, I
E
= 0
I
C
= –2mA, I
B
= 0
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
V
EB
= –6V, I
C
= 0
V
CE
= –10V, I
C
= –5mA
V
CE
= –10V, I
C
= –5mA
I
C
= –10mA, I
B
= – 0.3mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1k
V
CC
= –5V, V
B
= –2.5V, R
L
= 1k
–50
V
Collector to emitter voltage
–50
V
Collector cutoff current
– 0.1
μ
A
μ
A
– 0.5
Emitter cutoff current
– 0.2
mA
Forward current transfer ratio
80
Forward current transfer h
FE
ratio
h
FE
(small/large)
*1
V
CE(sat)
V
OH
V
OL
R
1
R
1
/R
2
f
T
0.5
0.99
Collector to emitter saturation voltage
– 0.09
– 0.25
V
Output voltage high level
–4.9
V
Output voltage low level
– 0.2
V
Input resistance
–30%
2.2
+30%
k
Resistance ratio
0.047
Transition frequency
V
CB
= –10V, I
E
= 1mA, f = 200MHz
80
MHz
*1
Ratio between 2 elements
5
1
Tr2
Tr1
4
3
2
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