參數(shù)資料
型號(hào): XN05601
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: Silicon PNP epitaxial planer transistor
中文描述: 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, MINI6-G1, SC-74, 6 PIN
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 60K
代理商: XN05601
2
Composite Transistors
I
Electrical Characteristics
(Ta=25C)
G
Tr1
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
I
C
= –10
μ
A, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CB
= –20V, I
E
= 0
V
CE
= –10V, I
B
= 0
V
CE
= –10V, I
C
= –2mA
I
C
= –100mA, I
B
= –10mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–60
V
Collector to emitter voltage
–50
V
Emitter to base voltage
–7
V
Collector cutoff current
– 0.1
μ
A
μ
A
–100
Forward current transfer ratio
160
460
Collector to emitter saturation voltage
– 0.3
– 0.5
V
Transition frequency
80
MHz
Collector output capacitance
2.7
pF
G
Tr2
XN5601
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= –2mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
60
V
Collector to emitter voltage
50
V
Emitter to base voltage
7
V
Collector cutoff current
0.1
μ
A
μ
A
100
Forward current transfer ratio
160
460
Collector to emitter saturation voltage
0.1
0.3
V
Transition frequency
150
MHz
Collector output capacitance
3.5
pF
相關(guān)PDF資料
PDF描述
XN6111 Silicon PNP epitaxial planer transistor
XN06111 Silicon PNP epitaxial planer transistor
XN6112 COMBINATION D SUB COAX R/A PCB
XN6113 Silicon PNP epitaxial planer transistor
XN6114 Silicon PNP epitaxial planer transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
XN05601(XN5601) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 複合トランジスタ
XN0560100L 功能描述:TRANS ARRAY PNP/NPN MINI-6P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:2 NPN(雙) 電流 - 集電極 (Ic)(最大):100mA 電壓 - 集電極發(fā)射極擊穿(最大):45V Ib、Ic條件下的Vce飽和度(最大):600mV @ 5mA,100mA 電流 - 集電極截止(最大):- 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):200 @ 2mA,5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP,SC-88,SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402
XN06 24 VDC 制造商:Crouzet 功能描述:
XN06111 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor
XN06111(XN6111) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 複合トランジスタ