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參數(shù)資料
| 型號： | XN05531 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer transistor |
| 中文描述： | 2 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINI6-G1, SC-74, 6 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 88K |
| 代理商： | XN05531 |
1
Composite Transistors
XN05531
(XN5531)
Silicon NPN epitaxial planer transistor
For high frequency oscillation and mixing
I
Features
G
Two elements incorporated into one package.
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
2SC3130
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
5M
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
15
V
Collector to emitter voltage
10
V
Emitter to base voltage
V
EBO
I
C
P
T
3
V
Collector current
50
mA
Total power dissipation
200
mW
Junction temperature
T
j
T
stg
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
10
V
Emitter to base voltage
V
EBO
I
CBO
I
CEO
3
V
Collector cutoff current
1
μ
A
μ
A
10
Forward current transfer ratio
h
FE1
V
CE
= 4V, I
C
= 5mA
V
CE
= 4V, I
C
= 5mA
V
CE
= 4V, I
C
= 100
μ
A
75
200
400
Forward current transfer h
FE
ratio
h
FE
(small/large)
*1
0.5
0.99
h
FE2
/h
FE1
ratio
h
FE2
/h
FE1
0.75
1.6
V
CE
= 4V, I
C
= 5mA
I
C
= 20mA, I
B
= 4mA
V
CB
= 4V, I
E
= 0, f = 1MHz
Collector to emitter saturation voltage
V
CE(sat)
C
ob
0.5
V
Collector output capacitance
0.9
1.1
pF
Transition frequency
f
T
r
bb
'·C
C
C
rb
V
CB
= 4V, I
E
= –5mA, f = 200MHz
V
CB
= 4V, I
E
= –5mA, f = 30MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
1.4
1.9
2.5
GHz
Collector to base parameter
11.8
13.5
ps
Common base reverse transfer capacitance
0.25
0.35
pF
*1
Ratio between 2 elements
1 : Collector (Tr1)
2 : Emitter (Tr2)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini6-G1 Package
2.90
1.9
±0.1
(0.95)
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
(
0
±
+
–
0.30
+0.10
0.50
+0.10
(0.95)
6
5
4
1
3
2
+0.20
5
°
10
°
6
1
2
Tr2
Tr1
5
4
3
Note) The Part number in the Parenthesis shows conventional part number.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| XN05531(XN5531) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 複合トランジスタ |
| XN0553100L | 功能描述:TRANS ARRAY NPN/NPN MINI-6P RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 陣列 系列:- 標準包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應商設備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| XN05553 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| XN05553(XN5553) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 複合トランジスタ |
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