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參數(shù)資料
| 型號： | XN02501 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復(fù)合設(shè)備-復(fù)合晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 84K |
| 代理商： | XN02501 |
1
Publication date: August 2003
SJJ00042BED
Composite Transistors
XN02501
(XN2501)
Silicon NPN epitaxial planar type
For general amplification
■
Features
Two elements incorporated into one package
(Base-coupled transistors)
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
2SD0601A (2SD601A)
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Internal Connection
Marking Symbol: 5W
1: Collector (Tr1)
2: Collector (Tr2)
3: Emitter (Tr2)
EIAJ: SC-74A
4: Base
5: Emitter (Tr1)
Mini5-G1 Package
2.90
±
0.1
(0.1.9
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
0
±
0
0
±
0
+
–
0.30
+0.10
5
4
3
1
2
+0.20
5
10
2
4
1
5
3
Tr2
Tr1
Note) The part number in the parenthesis shows conventional part number.
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
60
50
7
Unit
V
V
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
100
mA
Peak collector current
I
CP
200
mA
Total power dissipation
P
T
T
j
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Ratio between 2 elements
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
=
2 mA
V
CE
=
10 V, I
C
=
2 mA
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
7
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
100
Forward current transfer ratio
h
FE
ratio
*
h
FE
160
460
h
FE(Small/
0.50
0.99
Large)
V
CE(sat)
Collector-emitter saturation voltage
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
0.1
0.3
V
Transition frequency
f
T
C
ob
150
MHz
Collector output capacitance
(Common base, input open circuited)
3.5
pF
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|---|---|
| XN2501 | Composite Device - Composite Transistors |
| XN02501(XN2501) | 複合デバイス － 複合トランジスタ |
| XN02531(XN2531) | 複合デバイス － 複合トランジスタ |
| XN04503 | Composite Device - Composite Transistors |
| XN4503 | Composite Device - Composite Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XN02501(XN2501) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 複合トランジスタ |
| XN0250100L | 功能描述:TRANS ARRAY NPN/NPN MINI-5P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| XN02531 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| XN02531(XN2531) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 複合トランジスタ |
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