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參數(shù)資料
| 型號(hào)： | XN01558 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type For low-frequency amplification |
| 中文描述： | 500 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINI5-G1, SC-74A, 5 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 77K |
| 代理商： | XN01558 |
1
Publication date: December 2003
SJJ00264BED
Composite Transistors
XN01558
Silicon NPN epitaxial planar type
For low-frequency amplification
■
Features
Two elements incorporated into one package
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
2SD2623
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
4: Emitter
5: Base (Tr1)
Mini5-G1 Package
Unit: mm
2.90
1.9
(0.95) (0.95)
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
(
0
±
0
+
–
0.30
+0.10
5
4
3
1
2
+0.20
5
10
2
Tr1
Tr2
4
1
5
3
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Internal Connection
Marking Symbol: 4Z
V
V
1 k
on
=
V
B
×
1
000
R
A
V
B
(
)
f
=
1 kHz
V
=
0.3 V
V
B
I
B
=
1 mA
V
A
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Rating
25
20
12
Unit
V
V
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
0.5
A
Peak collector current
1
A
Total power dissipation
P
T
300
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
25 V, I
E
=
0
25
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
20
V
Emitter-base voltage (Collector open)
12
V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
h
FE
ratio
*1, 2
I
CBO
100
nA
h
FE
V
CE
= 2 V, I
C
= 0.5 A
V
CE
=
2 V, I
C
=
0.5 A
200
800
h
FE(Small
0.50
0.99
/Large)
V
CE(sat)
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
I
C
=
0.5 A, I
B
=
20 mA
I
C
=
0.5 A, I
B
=
50 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
0.14
0.40
V
V
BE(sat)
1.2
V
Transition frequency
f
T
C
ob
200
MHz
Collector output capacitance
(Common base, input open circuited)
ON resistanse
*3
10
pF
R
on
1.0
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL
STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2: Ratio between one and another device
*3: R
on
test circuit
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