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參數(shù)資料
| 型號： | XC9107D3MR |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | PWM Control, PWM/PFM Switching Control, Step-up DC/DC Converters |
| 中文描述： | PWM控制，PWM / PFM切換控制，升壓DC / DC轉(zhuǎn)換器 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 109K |
| 代理商： | XC9107D3MR |
Preliminary
"
ELECTRICAL CHARACTERISTICS
XC9106D003MR, XC9107D003MR
(FOSC=300 (kHz)
Ta=25
O
C
*1
*1
Test Conditions: Unless otherwise stated, CL: ceramic, recommended MOS FET should be connected.
VDD =
(V)
!
Vref =
VIN =
(V)
!
IOUT =
Notes 1* :
Although the IC starts step-up operations from a VDD of 0.8V, the output voltage and oscillation frequency are stabilized at
VDD
≥
1.8V or (Vref applied voltage + 0.7V). Therefore, a VDD of more than 1.8V or (Vref applied voltage + 0.7V) is recommended when VDD is
supplied from VIN or other power sources.
(V) ,
(mA)
RFB1, 2 x 10
"
TYPICAL APPLICATION CIRCUIT
5
PWM Control, PWM/PFM Switching Control,
Step-up DC/DC Converters
Externally Applied Reference Voltage (Vref)
XC9106 / 07 Series
PARAMETER
Output Voltage
Reference Voltage Range
SYMBOL
VOUT
Vref
CONDITIONS
MIN.
8.820
0.8
0.784
0.882
2.450
TYP.
9.000
MAX.
9.180
2.5
0.816
0.918
2.500
UNITS CIRCUIT
V
V
Vref = 0.9V
1
-
Vref = 0.8V
Vref = 0.9V
Vref = 2.5V
FB Control Voltage
VFB
0.800
0.900
2.500
V
4
Power Supply Voltage Range
Operation Start Voltage
VDD
VST1
VDD as shown right or
(Vref applied voltage + 0.7V)
1.8
10.0
0.9
V
V
-
Recommended Circuit using 2SD1628, IOUT=1.0mA
No external connections
CE/Vref=0.9V, Voltage applied, FB=0V
Recommended Circuit using 2SD1628, IOUT=1.0mA
Same as VST2, VDD=3.300V
Same as IDD1, FB=1.2V
Same as IDD1, CE/Vref=0V
Same as IDD1
Same as IDD1
No Load (XC9106 series)
Recommended Circuit using XP161A1355
Vref=0.9V
Same as IDD1
Same as IDD1
Same as IDD1, VEXT=VOUT-0.4V
Same as IDD1, VEXT=0.4V
Same as IDD2, CE=0.8V
Same as IDD2, CE=2.5V
3
Oscillation Start Voltage
VST2
0.8
V
4
Operation Holding Voltage
Supply Current 1
Supply Current 2
Stand-by Current
Oscillation Frequency
Maximum Duty Ratio
PFM Duty Ratio
Efficiency
Soft-start Time
CE "High" Voltage
CE "Low" Voltage
EXT "High" ON Resistance
EXT "Low" ON Resistance
VHLD
IDD1
IDD2
ISTB
FOSC
MAXDTY
PFMDTY
EFFI
TSS
VCEH
VCEL
REXTH
REXTL
0.7
88
22
1.0
345
87
40
V
μ
A
μ
A
μ
A
3
4
4
5
4
4
1
1
1
5
5
4
4
62
16
255
75
24
300
81
32
85
10.0
KHz
%
%
%
mS
V
V
5.0
0.65
20.0
0.20
36
24
0.0
24
16
-1.0
0.0
CE "High" Current
ICEH
CE "Low" Current
FB "High" Current
FB "Low" Current
ICEL
IFBH
IFBL
Same as IDD2, CE=0V
Same as IDD2, FB=VDD
Same as IDD2, FB=1.0V
-0.1
0.1
-0.1
μ
A
μ
A
μ
A
5
5
5
3.30
3.30
0.09
50
When obtaining VDD from a source other than VOUT, please insert a
capacitor CDD between the VDD pin and the GND pin in order to
provide stabler operations.
Please wire CL & CIN between the VOUT/VDD pin and the GND pin.
Strengthen the wiring sufficiently. When using a capacitor other than
ceramic or low ESR at CL, please take away RSENSE and short.
Insert Rb and CB when using a
bipolar NPN Transistor.
2.5
μ
A
5
V
OUT
Nch Power
MOS FET
RSENSE
L
V
IN
SD
R
FB1
R
FB2
C
FB
CE/Vref
1
5
4
3
2
CL
Rb
Cb
Semiconductor Ltd.
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