• <small id="nwfmg"><sup id="nwfmg"><tr id="nwfmg"></tr></sup></small>
    <kbd id="nwfmg"></kbd>
    <kbd id="nwfmg"></kbd>
    <rt id="nwfmg"></rt>
  • <rt id="nwfmg"><legend id="nwfmg"><rp id="nwfmg"></rp></legend></rt>
  • <big id="nwfmg"><xmp id="nwfmg"><dl id="nwfmg"></dl>
  • 參數(shù)資料
    型號: X5165P
    英文描述: ; Leaded Process Compatible:Yes
    中文描述: CPU監(jiān)控與16Kbit的EEPROM的SPI
    文件頁數(shù): 7/21頁
    文件大?。?/td> 117K
    代理商: X5165P
    X5163/X5165 – Preliminary Information
    Characteristics subject to change without notice.
    7 of 21
    REV 1.1 3/5/01
    www.xicor.com
    Figure 5. Read EEPROM Array Sequence
    0
    1
    2
    3
    4
    5
    6
    7
    8
    9
    10
    20 21 22 23 24 25
    26 27 28 29 30
    7
    6
    5
    4
    3
    2
    1
    0
    Data Out
    CS
    SCK
    SI
    SO
    MSB
    High Impedance
    Instruction
    16 Bit Address
    15 14 13
    3
    2
    1
    0
    In Circuit Programmable ROM Mode
    This mechanism protects the block lock and Watchdog
    bits from inadvertent corruption.
    In the locked state
    (
    Programmable ROM Mode) the
    WP pin is LOW and the nonvolatile bit WPEN is “1”.
    This mode disables nonvolatile writes to the device’s
    Status Register.
    Setting the WP pin LOW while WPEN is a “1” while an
    internal write cycle to the Status Register is in progress
    will not stop this write operation, but the operation dis-
    ables subsequent write attempts to the Status Register.
    When WP is HIGH, all functions, including nonvolatile
    writes to the Status Register operate normally. Setting
    the WPEN bit in the Status Register to “0” blocks the
    WP pin function, allowing writes to the Status Register
    when WP is HIGH or LOW. Setting the WPEN bit to “1”
    while the WP pin is LOW activates the Programmable
    ROM mode, thus requiring a change in the WP pin
    prior to subsequent Status Register changes. This
    allows manufacturing to install the device in a system
    with WP pin grounded and still be able to program the
    Status Register. Manufacturing can then load Configu-
    ration data, manufacturing time and other parameters
    into the EEPROM, then set the portion of memory to
    be protected by setting the block lock bits, and finally
    set the “OTP mode” by setting the WPEN bit. Data
    changes now require a hardware change.
    Read Sequence
    When reading from the EEPROM memory array, CS is
    first pulled low to select the device. The 8-bit READ
    instruction is transmitted to the device, followed by the
    16-bit address. After the READ opcode and address
    are sent, the data stored in the memory at the selected
    address is shifted out on the SO line. The data stored
    in memory at the next address can be read sequen-
    tially by continuing to provide clock pulses. The
    address is automatically incremented to the next
    higher address after each byte of data is shifted out.
    When the highest address is reached, the address
    counter rolls over to address $0000 allowing the read
    cycle to be continued indefinitely. The read operation is
    terminated by taking CS high. Refer to the Read
    EEPROM Array Sequence (Figure 1).
    To read the Status Register, the CS line is first pulled
    low to select the device followed by the 8-bit RDSR
    instruction. After the RDSR opcode is sent, the contents
    of the Status Register are shifted out on the SO line.
    Refer to the Read Status Register Sequence (Figure 2).
    Write Sequence
    Prior to any attempt to write data into the device, the
    “Write Enable” Latch (WEL) must first be set by issuing
    the WREN instruction (Figure 3). CS is first taken LOW,
    then the WREN instruction is clocked into the device.
    After all eight bits of the instruction are transmitted, CS
    must then be taken HIGH. If the user continues the
    Write Operation without taking CS HIGH after issuing
    the WREN instruction, the Write Operation will be
    ignored.
    相關PDF資料
    PDF描述
    X51638P SPI Serial EEPROM with Supervisory Features
    X51638P-4.5A SPI Serial EEPROM with Supervisory Features
    X51638S8-4.5A SPI Serial EEPROM with Supervisory Features
    X51638S8I 5V, 8MHZ, SOIC, IND TEMP(MCU AVR)
    X51638S8I-2.7A SPI Serial EEPROM with Supervisory Features
    相關代理商/技術參數(shù)
    參數(shù)描述
    X5165P-2.7 功能描述:IC SUPERVISOR CPU 16K EE 8-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - 監(jiān)控器 系列:- 產品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:2,500 系列:- 類型:簡單復位/加電復位 監(jiān)視電壓數(shù)目:1 輸出:推挽式,圖騰柱 復位:低有效 復位超時:最小 145 ms 電壓 - 閥值:2.64V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:16-WQFN 裸露焊盤 供應商設備封裝:16-TQFN-EP(4x4) 包裝:帶卷 (TR)
    X5165P-2.7A 功能描述:IC SUPERVISOR CPU 16K EE 8-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - 監(jiān)控器 系列:- 產品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:2,500 系列:- 類型:簡單復位/加電復位 監(jiān)視電壓數(shù)目:1 輸出:推挽式,圖騰柱 復位:低有效 復位超時:最小 145 ms 電壓 - 閥值:2.64V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:16-WQFN 裸露焊盤 供應商設備封裝:16-TQFN-EP(4x4) 包裝:帶卷 (TR)
    X5165P-4.5A 功能描述:IC SUPERVISOR CPU 16K EE 8-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - 監(jiān)控器 系列:- 產品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:2,500 系列:- 類型:簡單復位/加電復位 監(jiān)視電壓數(shù)目:1 輸出:推挽式,圖騰柱 復位:低有效 復位超時:最小 145 ms 電壓 - 閥值:2.64V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:16-WQFN 裸露焊盤 供應商設備封裝:16-TQFN-EP(4x4) 包裝:帶卷 (TR)
    X5165PI 功能描述:IC SUPERVISOR CPU 16K EE 8-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - 監(jiān)控器 系列:- 產品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:2,500 系列:- 類型:簡單復位/加電復位 監(jiān)視電壓數(shù)目:1 輸出:推挽式,圖騰柱 復位:低有效 復位超時:最小 145 ms 電壓 - 閥值:2.64V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:16-WQFN 裸露焊盤 供應商設備封裝:16-TQFN-EP(4x4) 包裝:帶卷 (TR)
    X5165PI-2.7 功能描述:IC SUPERVISOR CPU 16K EE 8-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - 監(jiān)控器 系列:- 產品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:2,500 系列:- 類型:簡單復位/加電復位 監(jiān)視電壓數(shù)目:1 輸出:推挽式,圖騰柱 復位:低有效 復位超時:最小 145 ms 電壓 - 閥值:2.64V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:16-WQFN 裸露焊盤 供應商設備封裝:16-TQFN-EP(4x4) 包裝:帶卷 (TR)