參數(shù)資料
型號: X28C513EI-20
廠商: INTERSIL CORP
元件分類: DRAM
英文描述: 5V, Byte Alterable EEPROM
中文描述: 64K X 8 EEPROM 5V, 200 ns, CQCC32
封裝: CERAMIC, LCC-32
文件頁數(shù): 12/25頁
文件大?。?/td> 126K
代理商: X28C513EI-20
12
X28C512/X28C513
Read Cycle Limits
X28C512-90 X28C512-12 X28C512-15 X28C512-20 X28C512-25
X28C513-90 X28C513-12 X28C513-15 X28C513-20 X28C513-25
Symbol
Parameter
Min.
Max. Min. Max.
Min. Max. Min. Max.
Min. Max. Units
t
RC
t
CE
t
AA
t
OE
t
LZ(3)
t
OLZ(3)
OE
LOW to Active Output
t
HZ(3)
CE
HIGH to High Z Output
t
OHZ(3)
OE
HIGH to High Z Output
t
OH
Output Hold from
Address Change
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE
LOW to Active Output
90
120
150
200
250
ns
ns
ns
ns
ns
ns
ns
ns
ns
90
90
40
120
120
50
150
150
50
200
200
50
250
250
50
0
0
0
0
0
0
0
0
0
0
40
40
50
50
50
50
50
50
50
50
0
0
0
0
0
3856 PGM T09.4
A.C. CHARACTERISTICS
(Over the recommended operating conditions, unless otherwise specified.)
Read Cycle
Notes:
(3) t
LZ
min., t
HZ
, t
OLZ
min., and tOHZ are periodically sampled and not 100% tested. t
HZ
max. and t
OHZ
max. are measured, with
C
L
= 5pF from the point when
CE
or
OE
return HIGH (whichever occurs first) to the time when the outputs are no longer driven.
3856 FHD F16
tCE
tRC
ADDRESS
CE
OE
WE
DATA VALID
DATA VALID
tOE
tLZ
tOLZ
tOH
tAA
tHZ
tOHZ
DATA I/O
VIH
HIGH Z
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