參數(shù)資料
型號(hào): WV3HG2128M72AER534D6FMG
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類(lèi): DRAM
英文描述: 256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
封裝: ROHS COMPLIANT, DIMM-240
文件頁(yè)數(shù): 7/12頁(yè)
文件大?。?/td> 259K
代理商: WV3HG2128M72AER534D6FMG
WV3HG2128M72AER-D6
November 2006
Rev. 1
ADVANCED
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
RECOMMENDED DC OPERATING CONDITIONS
All voltages referenced to VSS
Parameter
Symbol
Min
Typical
Max
Units
Notes
Supply Voltage
VCC
1.7
1.8
1.9
V
1
VCCL Supply Voltage
VCCL
1.7
1.8
1.9
V
4
I/O Supply Voltage
VCCQ
1.7
1.8
1.9
V
4
I/O Reference Voltage
VREF
0.49 x VCCQ
0.50 x VCCQ
0.51 X VCCQ
V2
I/O Termination Voltage (system)
VTT
VREF - 0.04
VREF
VREF + 0.04
mV
3
NOTE:
1. VCC and VCCQ must track each other. VCCQ must be less than or equal to VCC.
2. VREF is expected to equal VCCQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-
peak noise (non-common mode) on VREF may not exceed ±1percent of the DC value. Peak-to-peak AC noise on VREF may
not exceed ±2 percent of VREF (DC). This measurement is to be taken at the nearest VREF bypass capacitor.
3. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal
to VREF and must track variations in the DC level of VREF.
4. VCCQ tracks with VCC; VCCL tracks with VCC.
DC CHARACTERISTICS
Symbol
Parameter
Min
Max
Units
VCC
VCC Supply Voltage Relative to VSS
-1.0
2.3
V
VCCQ
VCCQ Supply Voltage Relative to VSS
-0.5
2.3
V
VCCL
VCCL Supply Voltage Relative to Vss
-0.5
2.3
V
VIN, VOUT Voltage on any Pin Relative to VSS
-0.5
2.3
V
TSTG
Storage Temperature
-55
100
°C
II
Input Leakage Current; Any input 0V ≤ VIN ≤ VCC;
VREF input 0V ≤ VIN ≤0.95V; (All other pins not under
test = 0V)
Command/Address,
RAS#, CAS#, WE# S#,
CKE, CK, CK#, DM
-5
5
A
IOZ
Output Leakage Current; 0V ≤ VOUT ≤ VCCQ; DQs
and ODT are disabled
DQ, DQS, DQS#
-5
5
A
IVREF
VREF Leakage Current; VREF = Valid VREF level
-36
36
A
CAPACITANCE
TA = 25°C, f = 1MHz, VCC = VCCQ = 1.8V
Parameter
Symbol
Min
Max
Unit
Input Capacitance (A0-A13, BA0-BA1, RAS#, CAS#, WE#)
CIN1
911
pF
Input Capacitance (CKE0, CKE1), (ODT0, ODT1)
CIN2
911
pF
Input Capacitance (CS0#, CS1#)
CIN3
14
18
pF
Input Capacitance (CK0,CK0#)
CIN4
67
pF
Input Capacitance (DQS0#-DQS8#)
CIN5
912
pF
Input Capacitance (DQ0-DQ63), (CB0-CB7)
COUT1
912
pF
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WV3HG2128M72AER-D6 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL
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