參數(shù)資料
型號： WSE128K16-42H1IA
元件分類： 存儲器
英文描述： SPECIALTY MEMORY CIRCUIT, CHIP66
封裝： CERAMIC, HIP-66
文件頁數(shù)： 9/15頁
文件大?。?/td> 299K
代理商： WSE128K16-42H1IA
3
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WSE128K16-XXX
EEPROM TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
CS
OE
WE
Mode
Data I/O
H
X
Standby
High Z
L
H
Read
Data Out
L
H
L
Write
Data In
X
H
X
Out Disable
High Z/Data Out
X
H
Write
X
L
X
Inhibit
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.0
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
SCS = VIH, OE = VIH, VOUT = GND to VCC
10
A
SRAM Operating Supply Current x 16 Mode
ICCx16
SCS = VIL, OE = ECS = VIH, f = 5MHz, VCC = 5.5
360
mA
Standby Current
ISB
ECS = SCS = VIH, OE = VIH, f = 5MHz, VCC = 5.5
31.2
mA
SRAM Output Low Voltage
(35 to 45ns)
VOL
IOL = 8.0mA, VCC = 4.5
0.4
V
(70ns)
VOL
IOL = 2.1mA, VCC = 4.5
0.4
V
SRAM Output High Voltage
(35 to 45ns)
VOH
IOH = -4.0mA, VCC = 4.5
2.4
V
(70ns)
VOH
IOH = -1mA, VCC = 4.5
2.4
V
EEPROM Operating Supply Current x 16 Mode
ICC1
ECS = VIL, OE = SCS = VIH
155
mA
EEPROM Output Low Voltage
VOL
IOL = 2.1 mA, VCC = 4.5V
0.45
V
EEPROM Output High Voltage
VOH1
IOH = 400
A, VCC = 4.5V
2.4
V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
Vcc+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
CAPACITANCE
(TA = +25
°C)
Parameter
Symbol
Conditions
Max
Unit
OE capacitance
COE
VIN = 0 V, f = 1.0 MHz
50
pF
WE1-4 capacitance
CWE
VIN = 0 V, f = 1.0 MHz
pF
HIP (PGA)
20
CQFP G2T
20
CS1-4 capacitance
CCS
VIN = 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
SRAM TRUTH TABLE
SCS
OE
SWE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
H
Read
High Z
Active
L
X
L
Write
Data In
Active
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