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參數(shù)資料
| 型號(hào)： | WS512K32NV-70HC |
| 元件分類： | SRAM |
| 英文描述： | 512K X 32 MULTI DEVICE SRAM MODULE, 70 ns, CHIP66 |
| 封裝： | CERAMIC, HIP-66 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 212K |
| 代理商： | WS512K32NV-70HC |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS512K32V-XXX
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
Vcc+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
4.0
V
TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
3.0
3.6
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp (Mil)
TA
-55
+125
°C
CAPACITANCE
(TA = +25
°C)
Parameter
Symbol
Conditions
Max
Unit
OE Capacitance
COE
VIN = 0 V, f = 1.0 MHz
50
pF
WE Capacitance
CWE
VIN = 0 V, f = 1.0 MHz
pF
HIP (PGA)
20
CQFP G2T
15
CS Capacitance
CCS
VIN = 0 V, f = 1.0 MHz
20
pF
Data I/O Capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
20
pF
Address Input Capacitance
CAD
VIN = 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
(VCC = 3.3V, VSS = 0V, TA = -55
°C to +125°C)
Parameter
Symbol
Conditions
Units
Min
Max
Input Leakage Current
ILI
VCC = 3.6, VIN = GND to VCC
10
A
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current x 32 Mode
ICC x 32
CS = VIL, OE = VIH, f = 5MHz, Vcc = 3.6
100
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, Vcc = 3.6
2.0
mA
Output Low Voltage
VOL
IOL = 2.1mA, VCC = 3.0
0.4
V
Output High Voltage
VOH
IOH = -1.0mA, VCC = 3.0
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
H
Out Disable
High Z
Active
L
X
L
Write
Data In
Active
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