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參數(shù)資料
| 型號： | WMS128K8-25DRI |
| 元件分類： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 25 ns, CDSO32 |
| 封裝： | CERAMIC, SOJ-32 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 208K |
| 代理商： | WMS128K8-25DRI |
9
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WMS128K8-XXX
Parameter
Symbol
Conditions
Units
Min
Typ
Max
Data Retention Supply Voltage
VDR
CS
≥ VCC -0.2V
2.0
5.5
V
Data Retention Current
ICCDR2
VCC = 2V
2
mA
DATA RETENTION CHARACTERISTICS
(TA = -55
°C to +125°C)
LOW POWER VERSION ONLY
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
M = Military Screened
-55
°C to +125°C
I = Industrial
-40
°C to +85°C
C = Commercial
0
°C to +70°C
PACKAGE:
C = 32 Pin Ceramic .600" DIP (Package 300)
CL = 32 Pin Rectangular Ceramic Leadless Chip Carrier (Package 601)
DE = 32 Lead Ceramic SOJ (Package 101) Evolutionary
DJ = 36 Lead Ceramic SOJ (Package 100)
DR = 32 Lead Ceramic SOJ (Package 101) Revolutionary
F = 36 Lead Ceramic Flat Pack (Package 226)
FE = 32 Lead Ceramic Flat Pack (Package 220)
ACCESS TIME (ns)
IMPROVEMENT MARK
L = Low Power for 2V Data Retention
ORGANIZATION, 128K x 8
SRAM
MONOLITHIC
WHITE ELECTRONIC DESIGNS CORP.
ORDERING INFORMATION
W M S 128K8 X - XXX X X X
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WMS128K8-45CLI | 128K X 8 STANDARD SRAM, 45 ns, CQCC32 |
| WSE128K16-42H1IA | SPECIALTY MEMORY CIRCUIT, CHIP66 |
| WEDPNF8M721V-1012BC | SPECIALTY MEMORY CIRCUIT, PBGA275 |
| WE128K32-140G1UIA | 128K X 32 EEPROM 5V MODULE, 140 ns, CQFP68 |
| WE128K32-150G1UM | 128K X 32 EEPROM 5V MODULE, 150 ns, CQFP68 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WMS128K8-25DRIA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM|128KX8|CMOS|SOJ|32PIN|CERAMIC |
| WMS128K8-25DRM | 制造商:Microsemi Corporation 功能描述:128K X 8 SRAM MONOLITHIC, 5V, 25NS, 32 CSOJ REV., MIL-SCREEN - Bulk |
| WMS128K8-25DRMA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| WMS128K8-25FC | 制造商:Microsemi Corporation 功能描述:128K X 8 SRAM MONOLITHIC, 5V, 25NS, 36 FLATPACK, COMMERCIAL - Bulk |
| WMS128K8-25FCA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
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