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參數(shù)資料
| 型號： | WE32K32-90G1UMA |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | PROM |
| 英文描述： | 32K X 32 EEPROM 5V MODULE, 90 ns, CQFP68 |
| 封裝： | 23.90 MM, CERAMIC, LQFP-68 |
| 文件頁數(shù)： | 13/14頁 |
| 文件大?。?/td> | 204K |
| 代理商： | WE32K32-90G1UMA |
8
WhiteElectronicDesignsCorporationPhoenix,AZ(602)437-1520
White Electronic Designs
WE32K32-XXX
PAGE WRITE OPERATION
The WE32K32-XXX has a page write operation that al-
lows one to 64 bytes of data to be written into the device
and consecutively loads during the internal programming
period. Successive bytes may be loaded in the same
manner after the first data byte has been loaded. An in-
ternal timer begins a time out operation at each write cycle.
If another write cycle is completed within 150s or less, a
new time out period begins. Each write cycle restarts the
delay period. The write cycles can be continued as long
as the interval is less than the time out period.
PAGE WRITE CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C)
PAGE MODE WRITE CHARACTERISTICS
Parameter
Symbol
-80-90 -120-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time, TYP = 6ms
tWC
10
ms
Data Set-up Time
tDS
50
100
ns
Data Hold Time
tDH
0
10
ns
Write Pulse Width
tWP
100
150
ns
Byte Load Cycle Time
tBLC
150
s
Write Pulse Width High
tWPH
50
ns
The usual procedure is to increment the least signifi-
cant address lines from A0 through A5 at each write
cycle. In this manner a page of up to 64 bytes can be
loaded in to the EEPROM in a burst mode before be-
ginning the relatively long interval programming cycle.
After the 150s time out is completed, the EEPROM
begins an internal write cycle. During this cycle the
entire page of bytes will be written at the same time.
The internal programming cycle is the same regardless
of the number of bytes accessed.
FIG. 8 PAGE WRITE WAVEFORMS
NOTE:
1. Decoded Address Lines must be valid for the duration of the write.
OE
CS
WE
ADDRESS (1)
DATA
BYTE 0
BYTE 1
BYTE 2
BYTE 3
BYTE n
BYTE n + 1
VALID DATA
VALID
ADDRESS
tWC
tBLC
tWPH
tWP
tDH
tDS
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