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參數(shù)資料
| 型號： | WE128K32-300G2UIA |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 128K X 32 EEPROM 5V MODULE, 300 ns, CQFP68 |
| 封裝： | 22.40 MM, CERAMIC, LQFP-68 |
| 文件頁數(shù)： | 15/16頁 |
| 文件大?。?/td> | 347K |
| 代理商： | WE128K32-300G2UIA |
8
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
WE128K32-XXX
White Electronic Designs
PAGE WRITE OPERATION
The WE128K32-XXX has a page write operation that
allows one to 128 bytes of data to be written into the
device and consecutively loads during the internal
programming period. Successive bytes may be
loaded in the same manner after the first data byte
has been loaded. An internal timer begins a time out
operation at each write cycle. If another write cycle is
completed within 150s or less, a new time out period
begins. Each write cycle restarts the delay period.
The write cycles can be continued as long as the
interval is less than the time out period.
The usual procedure is to increment the least
significant address lines from A0 through A6 at
each write cycle. In this manner a page of up to
128 bytes can be loaded in to the EEPROM in a
burst mode before beginning the relatively long
interval programming cycle.
After the 150s time out is completed, the EEPROM
begins an internal write cycle. During this cycle the
entire page of bytes will be written at the same
time. The internal programming cycle is the same
regardless of the number of bytes accessed.
PAGE WRITE CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C TO +125°C)
PAGE MODE
WRITE WAVEFORMS
1. Page address must remain valid for duration of write cycle.
PageModeWriteCharacteristics
Symbol
Unit
Parameter
Min
Max
WriteCycleTime,TYP=6ms
tWC
10
ms
AddressSet-upTime
tAS
0ns
Address Hold Time (1)
tAH
100
ns
DataSet-upTime
tDS
100
ns
DataHoldTime
tDH
10
ns
Write Pulse Width
tWP
150
ns
ByteLoadCycleTime
tBLC
150
s
Write Pulse Width High
tWPH
50
ns
x
FIG. 9
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