- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄231492 > W3EG7266S262D3S (MICROSEMI CORP-PMG MICROELECTRONICS) 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 PDF資料下載
參數(shù)資料
| 型號(hào)： | W3EG7266S262D3S |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | DIMM-184 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 173K |
| 代理商： | W3EG7266S262D3S |
5
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
W3EG7266S-D3
October 2005
Rev. 3
PRELIMINARY
IDD SPECIFICATIONS AND TEST CONDITIONS
Recommended operating conditions, 0°C
≤ TA ≤ 70°C, VCC = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V
Includes DDR SDRAM component only
Parameter
Symbol
Conditions
DDR266@CL=2
Max
DDR266@CL=2.5
Max
DDR200@CL=2
Max
Units
Operating Current
IDD0
One device bank; Active - Precharge;
tRC=tRC (MIN); tCK=tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle; Address and control
inputs changing once every two
cycles.
1170
1035
mA
Operating Current
IDD1
One device bank; Active-Read-
Precharge Burst = 2; tRC=tRC (MIN);
tCK=tCK (MIN); lOUT = 0mA; Address
and control inputs changing once per
clock cycle.
1440
1305
mA
Precharge Power-
Down Standby
Current
IDD2P
All device banks idle; Power-down
mode; tCK=tCK (MIN); CKE=(low)
45
rnA
Idle Standby Current
IDD2F
CS# = High; All device banks idle;
tCK=tCK (MIN); CKE = high; Address
and other control inputs changing
once per clock cycle. VIN = VREF for
DQ, DQS and DM.
405
360
mA
Active Power-Down
Standby Current
IDD3P
One device bank active; Power-Down
mode; tCK (MIN); CKE=(low)
315
270
mA
Active Standby
Current
IDD3N
CS# = High; CKE = High; One device
bank; Active-Precharge; tRC=tRAS
(MAX); tCK=tCK (MIN); DQ, DM and
DQS inputs changing twice per clock
cycle; Address and other control
inputs changing once per clock cycle.
450
mA
Operating Current
IDD4R
Burst = 2; Reads; Continuous burst;
One device bank active; Address
and control inputs changing once
per clock cycle; TCK= TCK (MIN); lOUT
= 0mA.
1485
1305
mA
Operating Current
IDD4W
Burst = 2; Writes; Continuous burst;
One device bank active; Address
and control inputs changing once per
clock cycle; tCK=tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle.
1440
1215
rnA
Auto Refresh
Current
IDD5
tRC = tRC (MIN)
2610
2520
mA
Self Refresh Current
IDD6
CKE
≤ 0.2V
45
mA
Operating Current
IDD7A
Four bank interleaving Reads (BL=4)
with auto precharge with tRC=tRC
(MIN); tCK=tCK (MIN); Address and
control inputs change only during
Active Read or Write commands.
3600
3150
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3HG264M72EER403AD7S | 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA244 |
| W7NCF01GH10IS4BG | 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC50 |
| W7NCF01GH21IS7DG | 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF01GH21ISAJG | 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| WED3EG7232S263JD3 | 32M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3EG7266S265AD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL |
| W3EG7266S265AD4I | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL |
| W3EG7266S265BD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL |
| W3EG7266S265BD4I | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL |
| W3EG7266S265D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 DDR SDRAM REGISTERED w/PLL |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。