參數資料
型號: W3EG72128S265AD4-MG
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA200
封裝: ROHS COMPLIANT, SO-DIMM-200
文件頁數: 13/14頁
文件大?。?/td> 197K
代理商: W3EG72128S265AD4-MG
8
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
W3EG72128S-AD4
-BD4
August 2005
Rev. 3
PRELIMINARY
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED
AC OPERATING CONDITIONS (Continued)
AC CHARACTERISTICS
335
262
265/202
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
NOTES
Address and control input setup time (slow slew rate)
tISS
0.8
1
ns
12
Address and Control input pulse width (for each input)
tIPW
2.2
ns
LOAD MODE REGISTER command cycle time
tMRD
12
15
ns
DQ-DQS hold, DQS to rst DQ to go non-valid, per access
tQH
tHP - tQHS
ns
22, 23
Data hold skew factor
tQHS
0.50
0.75
ns
ACTIVE to PRECHARGE command
tRAS
42
70,000
40
120,000
40
120,000
ns
30, 47
ACTIVE to READ with Auto precharge command
tRAP
15
20
ns
ACTIVE to ACTIVE/AUTO REFRESH command period
tRC
60
65
ns
AUTO REFRESH command period
tRFC
72
75
78
ns
42
ACTIVE to READ or WRITE delay
tRCD
15
20
ns
PRECHARGE command period
tRP
15
20
ns
DQS read preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
37
DQS read postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
37
ACTIVE bank a to ACTIVE bank b command
tRRD
12
15
ns
DQS write preamble
tWPRE
0.25
tCK
DQS write preamble setup time
tWPRES
0
ns
18, 19
DQS write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
17
Write recovery time
tWR
15
ns
Internal WRITE to READ command delay
tWTR
111
tCK
Data valid output window
NA
tQH -tDQSQ
tQH - tDQSQ
ns
22
REFRESH to REFRESH command interval
tREFC
70.3
s
21
Average periodic refresh interval
tREFI
7.8
s
21
Terminating voltage delay to VCC
tVTD
000
ns
Exit SELF REFRESH to non-READ command
tXSNR
75
ns
Exit SELF REFRESH to READ command
tXSRD
200
tCK
相關PDF資料
PDF描述
W3EG72256S202AJD3S 256M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
W3EG72256S262JD3MF 256M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
W3EG7232S335AD4ISG 32M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
W3EG7266S262D3S 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
W3HG264M72EER403AD7S 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA244
相關代理商/技術參數
參數描述
W3EG72128S265AD4-XG 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
W3EG72128S265BD4-XG 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
W3EG72128S265D3 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM UNBUFFERED
W3EG72128S265JD3 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM UNBUFFERED
W3EG72128S335AD4-XG 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL