參數(shù)資料
型號(hào): W3EG6466S202BD4SG
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
封裝: ROHS COMPLIANT, SO-DIMM-200
文件頁(yè)數(shù): 12/13頁(yè)
文件大?。?/td> 210K
代理商: W3EG6466S202BD4SG
8
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3EG6466S-AD4
-BD4
January 2005
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
PRELIMINARY
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC
OPERATING CONDITIONS (Continued)
AC CHARACTERISTICS
335
262
265/202
UNITS NOTES
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
DQ-DQS hold, DQS to rst DQ to go non-valid, per access
tQH
tHP - tQHS
ns
22, 23
Data hold skew factor
tQHS
0.75
ns
ACTIVE to PRECHARGE command
tRAS
42
70,000
40
120,000
40
120,000
ns
31, 47
ACTIVE to READ with Auto precharge command
tRAP
15
20
ns
ACTIVE to ACTIVE/AUTO REFRESH command period
tRC
60
65
ns
AUTO REFRESH command period
tRFC
72
75
ns
42
ACTIVE to READ or WRITE delay
tRCD
15
20
ns
PRECHARGE command period
tRP
15
20
ns
DQS read preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
37
DQS read postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
37
ACTIVE bank a to ACTIVE bank b command
tRRD
12
15
ns
DQS write preamble
tWPRE
0.25
tCK
DQS write preamble setup time
tWPRES
0
ns
18, 19
DQS write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
17
Write recovery time
tWR
15
ns
Internal WRITE to READ command delay
tWTR
111
tCK
Data valid output window
NA
tQH -tDQSQ
ns
22
REFRESH to REFRESH command interval
tREFC
70.3
μs21
Average periodic refresh interval
tREFI
7.8
μs21
Terminating voltage delay to VDD
tVTD
000
ns
Exit SELF REFRESH to non-READ command
tXSNR
75
ns
Exit SELF REFRESH to READ command
tXSRD
200
tCK
相關(guān)PDF資料
PDF描述
W7NCF01GH31CS5AG 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC
W7NCF01GH31IS4FG 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC
W7NCF08GH21IS8AG 512M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC
W7NCF512H20CS8BG 32M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC
W7NCF512H20CSBFG 32M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W3EG6466S262AD4 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED, w/PLL
W3EG6466S262BD4 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED, w/PLL
W3EG6466S265AD4 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED, w/PLL
W3EG6466S265BD4 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED, w/PLL
W3EG6466S335AD4 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED, w/PLL