參數(shù)資料
型號: W24258CQ70LE
廠商: WINBOND ELECTRONICS CORP
元件分類: SRAM
英文描述: 32K X 8 STANDARD SRAM, 100 ns, PDSO28
封裝: 8 X 13.40 MM, TSOP1-28
文件頁數(shù): 3/10頁
文件大小: 187K
代理商: W24258CQ70LE
Preliminary W24258C
- 2 -
TRUTH TABLE
CS
OE
WE
MODE
I/O1
I/O8
VDD CURRENT
H
X
Not Selected
High Z
ISB, ISB1
L
H
Output Disable
High Z
IDD
L
H
Read
Data Out
IDD
L
X
L
Write
Data In
IDD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Supply Voltage to VSS Potential
-0.5 to +7.0
V
Input/Output to VSS Potential
-0.5 to VDD +0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperature
-65 to +150
°C
Operating Temperature
0 to 70
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(VDD = 5V
±10%; VDD = 3V ±10%; VSS = 0V; TA = 0 to 70°C)
PARAMETER
SYM.
TEST CONDITIONS
5V
±10%
3V
±10%
UNIT
MIN.
MAX.
MIN.
MAX.
Input Low Voltage
VIL
-
-0.5
+0.8
-0.5
+0.6
V
Input High Voltage
VIH
-
+2.2
VDD +0.5
+2.0
VDD +0.5
V
Input Leakage
Current
ILI
VIN = VSS to VDD
-1
+1
-1
+1
A
Output Leakage
Current
ILO
VI/O = VSS to VDD,
CS = VIH (min.) or
OE = VIH (min.) or
WE = VIL (max.)
-1
+1
-1
+1
A
Output Low Voltage
VOL
IOL = +2.1 mA
-
0.4
-
0.4
V
Output High
Voltage
VOH
IOH = -1.0 mA
2.4
-
2.2
-
V
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