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參數(shù)資料
| 型號： | W1D128M72R8B-3.75AP-QA1 |
| 廠商： | XILINX INC |
| 元件分類： | DRAM |
| 英文描述： | 128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 |
| 封裝： | MO-237, DIMM-240 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 255K |
| 代理商： | W1D128M72R8B-3.75AP-QA1 |
DDR2-400, 533
Single Rank, x8 Registered SDRAM DIMMs
DDR2_RDIMM_1 rank_x8_spec
Rev. 1.0 - December, 04
Wintec Industries, Inc., reserves the right to change datasheets and/or products without any notice.
2004 Wintec Industries, Inc.
6
IDD Specifications and Conditions (512MB - 64Mx8, 9 components):
Symbol
Parameter
DRAM IC
Manufacturer*
-5
DDR2-400
-3.75
DDR2-533
Units
MT
TBD
mA
INF
745
918
mA
IDD0
Operating Current
SAM
1265
1420
mA
MT
TBD
mA
INF
790
1008
mA
IDD1
Operating Current
SAM
1330
1540
mA
MT
TBD
mA
INF
286
369
mA
IDD2P
Precharge Power-Down Current
SAM
495
535
mA
MT
TBD
mA
INF
475
603
mA
IDD2Q
Precharge Quiet Standby Current
SAM
665
715
mA
MT
TBD
mA
INF
538
639
mA
IDD2N
Precharge Standby Current
SAM
670
730
mA
MT
TBD
mA
INF
367
477
mA
Active Power-Down Standby Current
MRS(12) = 0
SAM
720
750
mA
MT
TBD
mA
INF
295
378
mA
IDD3P
Active Power-Down Standby Current
MRS(12) = 1
SAM
365
375
mA
MT
TBD
mA
INF
565
693
mA
IDD3N
Active Standby Current
SAM
1065
1180
mA
MT
TBD
mA
INF
925
1188
mA
IDD4W
Operating Current Burst Write
SAM
1725
2340
mA
MT
TBD
mA
INF
880
1143
mA
IDD4R
Operating Current Burst Read
SAM
1655
2020
mA
MT
TBD
mA
INF
1330
1503
mA
IDD5B
Burst Auto-Refresh Current
SAM
2125
2275
mA
MT
TBD
mA
INF
36
mA
IDD6
Self Refresh Current
SAM
490
560
mA
MT
TBD
mA
INF
1420
1593
mA
IDD7
Operating Current
SAM
3020
3155
mA
Note:
DRAM IC Manufacturer* - MT = Micron, INF = Infineon, SAM=Samsung
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