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參數(shù)資料
| 型號： | W1D128M72R8B-3.75AE-FB2 |
| 廠商： | XILINX INC |
| 元件分類： | DRAM |
| 英文描述： | 128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 |
| 封裝： | MO-237, DIMM-240 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 255K |
| 代理商： | W1D128M72R8B-3.75AE-FB2 |
DDR2-400, 533
Single Rank, x8 Registered SDRAM DIMMs
DDR2_RDIMM_1 rank_x8_spec
Rev. 1.0 - December, 04
Wintec Industries, Inc., reserves the right to change datasheets and/or products without any notice.
2004 Wintec Industries, Inc.
7
Electrical Characteristics and AC Timings:
VDD = +1.8V ± 0.1V, VDDQ = +1.8V ± 0.1V, VREF = VSS, f =100MHz, 0°C<TOPR <+55°C, VOUT(DC) = VDDQ/2
-5
DDR2-400
-3.75
DDR2-533
Parameter
Symbol
MIN
MAX
MIN
MAX
Units
DQ output access time from CK/ CK
tAC
-600
+600
-500
+500
ps
DQS output access time from CK/ CK
tDQSCK
-500
+500
-450
+450
ps
CK high-level width
tCH
0.45
0.55
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
0.45
0.55
tCK
CK half period
tHP
MIN
(tCH,
tCL)
-
MIN
(tCH,
tCL)
-
ps
CL=3
5,000
8,000
5,000
8,000
ps
Clock cycle time
tCK
CL=4 & 5
5,000
8,000
3,750
8,000
ps
DQ and DM input hold time
tDH
400
-
350
-
ps
DQ and DM input setup time
tDS
400
-
350
-
ps
Control & Address input pulse width for
each input
tIPW
0.6
-
0.6
-
tCK
DQ and DM input pulse width for each
input
tDIPW
0.35
-
0.35
-
tCK
Data-out high-impedance time from
CK/ CK
tHZ
-
tACmax
-
tACmax
ps
Data-out low-impedance time from
CK/ CK
tLZ
tACmin
tACmax
tACmin
tACmax
ps
DQS-DQ skew for DQS and associated DQ
signals
tDQSQ
-
350
-
300
ps
Data hold skew factor
tQHS
-
450
-
400
ps
Data output hold time from DQS
tQH
tHP-
tQHS
-
tHP-
tQHS
-
ps
Write command to 1st DQS latching
transition
tDQSS
WL-0.25
WL+
0.25
WL-0.25
WL+
0.25
tCK
DQS input low/high pulse width
tDQSL/H
0.35
-
0.35
-
tCK
DQS falling edge to CK setup time
tDSS
0.2
-
0.2
-
tCK
DQS falling edge hold time from CK
tDSH
0.2
-
0.2
-
tCK
Mode register set command cycle time
tMRD
2
-
2
-
tCK
Write preamble setup time
tWPRES
0
-
0
-
ps
Write preamble
tWPRE
0.25
-
0.25
-
tCK
Write postamble
tWPST
0.40
0.60
0.40
0.60
tCK
Read preamble
tRPRE
0.9
1.1
0.9
1.1
tCK
Read postamble
tRPST
0.4
0.6
0.4
0.6
tCK
Active to Precharge command
tRAS
45
70,000
45
70,000 ns
Active to Active command period
tRC
60
-
60
-
ns
Refresh to Refresh command interval
tRFC
105
-
105
-
ns
Active to Read/Write delay
tRCD
15
-
15
-
ns
Precharge command period
tRP
15
-
15
-
ns
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