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參數(shù)資料
| 型號(hào)： | W1D128M72R8A-5AP-HA1 |
| 廠商： | XILINX INC |
| 元件分類： | DRAM |
| 英文描述： | 128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 |
| 封裝： | MO-237, DIMM-240 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 255K |
| 代理商： | W1D128M72R8A-5AP-HA1 |
DDR2-400, 533
Single Rank, x8 Registered SDRAM DIMMs
DDR2_RDIMM_1 rank_x8_spec
Rev. 1.0 - December, 04
Wintec Industries, Inc., reserves the right to change datasheets and/or products without any notice.
2004 Wintec Industries, Inc.
5
IDD Specifications and Conditions (256MB - 32Mx8, 9 components):
Symbol
Parameter
DRAM IC
Manufacturer*
-5
DDR2-400
-3.75
DDR2-533
Units
MT
675
720
mA
INF
N/A
mA
IDD0
Operating Current
SAM
1265
1420
mA
MT
765
810
mA
INF
N/A
mA
IDD1
Operating Current
SAM
1330
1540
mA
MT
32
45
mA
INF
N/A
mA
IDD2P
Precharge Power-Down Current
SAM
495
535
mA
MT
189
225
mA
INF
N/A
mA
IDD2Q
Precharge Quiet Standby Current
SAM
665
715
mA
MT
225
270
mA
INF
N/A
mA
IDD2N
Precharge Standby Current
SAM
670
730
mA
MT
135
171
mA
INF
N/A
mA
Active Power-Down Standby Current
MRS(12) = 0
SAM
720
750
mA
MT
63
81
mA
INF
N/A
mA
IDD3P
Active Power-Down Standby Current
MRS(12) = 1
SAM
365
375
mA
MT
288
351
mA
INF
N/A
mA
IDD3N
Active Standby Current
SAM
1065
1180
mA
MT
1125
1440
mA
INF
N/A
mA
IDD4W
Operating Current Burst Write
SAM
1635
2115
mA
MT
990
1260
mA
INF
N/A
mA
IDD4R
Operating Current Burst Read
SAM
1520
1840
mA
MT
1485
1530
mA
INF
N/A
mA
IDD5B
Burst Auto-Refresh Current
SAM
1900
2005
mA
MT
27
mA
INF
N/A
mA
IDD6
Self Refresh Current
SAM
485
555
mA
MT
2070
2160
mA
INF
N/A
mA
IDD7
Operating Current
SAM
2885
2975
mA
Note:
DRAM IC Manufacturer* - MT = Micron, INF = Infineon, SAM=Samsung
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