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參數(shù)資料
| 型號： | VSKV71/08S90P |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 115 A, 800 V, SCR, TO-240AA |
| 封裝： | ROHS COMPLIANT, ADD-A-PAK-7 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 251K |
| 代理商： | VSKV71/08S90P |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 94516
2
Revision: 08-Sep-08
VSK(U, V)71..PbF, VSK(U, V)91..PbF Series
Vishay High Power Products
Thyristor/Thyristor, 75/95 A
(ADD-A-PAK Generation 5 Power Modules)
ELECTRICAL SPECIFICATIONS
Notes
(1) I2t for time tx = I2√t x √tx
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7 % x
π x I
AV < I < π x IAV
(4) I >
π x I
AV
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
IRRM,
IDRM
AT 125 °C
mA
VSKU/V71, 91
04
400
500
400
15
08
800
900
800
12
1200
1300
1200
16
1600
1700
1600
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VSKU/V71
VSKU/V91
UNITS
Maximum average on-state current
IT(AV)
180° conduction, half sine wave, TC = 85 °C
75
95
A
Maximum RMS on-state current
IT(RMS)
DC
115
150
TC
80
75
°C
Maximum peak, one-cycle
non-repetitive on-state current
ITSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial TJ = TJ
maximum
1665
1785
A
t = 8.3 ms
1740
1870
t = 10 ms
100 % VRRM
reapplied
1400
1500
t = 8.3 ms
1470
1570
t = 10 ms
TJ = 25 °C,
no voltage reapplied
1850
2000
t = 8.3 ms
1940
2100
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
Initial TJ = TJ
maximum
13.86
15.91
kA2s
t = 8.3 ms
12.56
14.52
t = 10 ms
100 % VRRM
reapplied
9.80
11.25
t = 8.3 ms
8.96
10.27
t = 10 ms
TJ = 25 °C,
no voltage reapplied
17.11
20.00
t = 8.3 ms
18.30
Maximum I2
√t for fusing
I2
√t (1)
t = 0.1 to 10 ms, no voltage reapplied
138.6
159.1
kA2
√s
Maximum value of threshold voltage
VT(TO) (2)
Low level (3)
TJ = TJ maximum
0.82
0.80
V
High level (4)
0.85
Maximum value of on-state
slope resistance
rt (2)
Low level (3)
3.00
2.40
m
Ω
High level (4)
2.90
2.25
Maximum on-state voltage drop
VTM
ITM = π x IT(AV)
TJ = 25 °C
1.59
1.58
V
IFM = π x IF(AV)
Maximum non-repetitive rate
of rise of turned on current
dI/dt
TJ = 25 °C, from 0.67 VDRM,
ITM = π x IT(AV), IG = 500 mA,
tr < 0.5 s, tp > 6 s
150
A/s
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
200
mA
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
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| VSKV91/04P | 功能描述:SCR模塊 400 Volt 95 Amp RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
| VSKV91/08P | 功能描述:SCR模塊 800 Volt 95 Amp RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
| VSKV91/12P | 功能描述:SCR模塊 1200 Volt 95 Amp RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
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