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參數(shù)資料
| 型號： | VSKV71/08P |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 115 A, 800 V, SCR, TO-240AA |
| 封裝： | ROHS COMPLIANT, ADD-A-PAK-7 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 251K |
| 代理商： | VSKV71/08P |
Document Number: 94516
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 08-Sep-08
3
VSK(U, V)71..PbF, VSK(U, V)91..PbF Series
Thyristor/Thyristor, 75/95 A
(ADD-A-PAK Generation 5 Power Modules)
Vishay High Power Products
Note
(1) Available with dV/dt = 1000 V/s, to complete code add S90 i.e. VSKU91/16S90P
Note
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
PGM
12
W
Maximum average gate power
PG(AV)
3.0
Maximum peak gate current
IGM
3.0
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum gate voltage required to trigger
VGT
TJ = - 40 °C
Anode supply = 6 V
resistive load
4.0
TJ = 25 °C
2.5
TJ = 125 °C
1.7
Maximum gate current required to trigger
IGT
TJ = - 40 °C
270
mA
TJ = 25 °C
150
TJ = 125 °C
80
Maximum gate voltage that will not trigger
VGD
TJ = 125 °C, rated VDRM applied
0.25
V
Maximum gate current that will not trigger
IGD
6mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and
off-state leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
15
mA
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted
2500 (1 min)
3500 (1 s)
V
Maximum critical rate of rise of
off-state voltage
dV/dt (1)
TJ = 125 °C, linear to 0.67 VDRM,
gate open circuit
500
V/s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Operating junction and storage
temperature range
TJ, TStg
- 40 to 125
°C
Maximum internal thermal resistance,
junction to case per module
RthJC
DC operation
0.165
K/W
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface flat, smooth and greased
0.1
Mounting torque ± 10 %
to heatsink
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
5
Nm
busbar
3
Approximate weight
110
g
4oz.
Case style
JEDEC
TO-240AA
ΔR CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSKU/V71
0.06
0.07
0.09
0.12
0.18
0.04
0.08
0.10
0.13
0.18
°C/W
VSKU/V91
0.04
0.05
0.06
0.08
0.12
0.03
0.05
0.06
0.08
0.12
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| VSKV71-12 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:ADD-A-PAK Generation VII Power Modules Thyristor/Thyristor, 75 A |
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| VSKV91/04P | 功能描述:SCR模塊 400 Volt 95 Amp RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
| VSKV91/08P | 功能描述:SCR模塊 800 Volt 95 Amp RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
| VSKV91/12P | 功能描述:SCR模塊 1200 Volt 95 Amp RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
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