參數(shù)資料
型號: VSKT91/12
廠商: VISHAY INTERTECHNOLOGY INC
元件分類: 晶閘管
英文描述: 210 A, 1200 V, SCR
封裝: ROHS COMPLIANT, ADD-A-PAK-3
文件頁數(shù): 6/9頁
文件大小: 445K
代理商: VSKT91/12
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 94632
6
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 17-May-10
VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series
Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 95 A
Fig. 10 - On-State Voltage Drop Characteristics
Fig. 11 - Thermal Impedance ZthJC Characteristics
Fig. 12 - Gate Characteristics
Instantaneous on-state voltage (V)
Instantaneous
on-state
current
(A)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
10
100
1000
Tj = 25°C
Tj = 125°C
Per leg
Square wave pulse duration (s)
Transient
thermal
impedance
Z
thJC
(°C/W)
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
Steady state value
RthJC = 0.22 °C/W
(DC operation)
Per leg
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
(b)
(a)
Rec tangular ga te pulse
(4)
(3) (2)
(1)
TJ
=
-4
0
°C
TJ
=
2
5
°
C
TJ
=
1
2
5
°C
a)Recommended load line for
b)Recommended load line for
VGD
IGD
Frequenc y Limited by PG(AV)
(1) PGM = 200 W, tp = 300 s
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
<= 30%rated di/ dt: 15 V, 40 ohms
tr = 1 s, tp >= 6 s
ra ted di/ d t: 20 V, 20 ohms
tr = 0.5 s, tp >= 6 s
IRK.71../ .91.. Series
Instantaneous
gate
voltage
(V)
Instantaneous gate current (A)
VSK.
相關(guān)PDF資料
PDF描述
VSKT91/14 210 A, 1400 V, SCR
VSKT91/16 210 A, 1600 V, SCR
VSKN71/08 117.75 A, 800 V, SCR, TO-240AA
VSKN71/10 117.75 A, 1000 V, SCR, TO-240AA
VSKN71/12 117.75 A, 1200 V, SCR, TO-240AA
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