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參數(shù)資料
| 型號： | VSKN91/16 |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 210 A, 1600 V, SCR |
| 封裝： | ROHS COMPLIANT, ADD-A-PAK-5 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 445K |
| 代理商： | VSKN91/16 |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 94632
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 17-May-10
VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series
Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 95 A
ELECTRICAL SPECIFICATIONS
Notes
(1) I2t for time tx = I2
√t x √tx
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7 % x
π x IAV < I < π x IAV
(4) I >
π x IAV
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
IRRM, IDRM
AT 125 °C
mA
VSK.91
04
400
500
400
15
06
600
700
600
08
800
900
800
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current (thyristors)
IT(AV)
180° conduction, half sine wave,
TC = 85 °C
95
A
Maximum average forward current (diodes)
IF(AV)
Maximum continuous RMS on-state current,
as AC switch
IO(RMS)
210
Maximum peak, one-cycle non-repetitive
on-state or forward current
ITSM
or
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial TJ = TJ maximum
2000
t = 8.3 ms
2094
t = 10 ms
100 % VRRM
reapplied
1682
t = 8.3 ms
1760
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
Initial TJ = TJ maximum
20
kA2s
t = 8.3 ms
18.26
t = 10 ms
100 % VRRM
reapplied
14.14
t = 8.3 ms
12.91
Maximum I2
√t for fusing
I2
√t (1)
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
200
kA2
√s
Maximum value or threshold voltage
VT(TO) (2)
Low level (3)
TJ = TJ maximum
0.97
V
High level (4)
1.1
Maximum value of on-state
slope resistance
rt (2)
Low level (3)
TJ = TJ maximum
2.76
m
Ω
High level (4)
2.38
Maximum peak on-state or forward voltage
VTM
ITM =
π x IT(AV)
TJ = 25 °C
1.73
V
VFM
IFM =
π x IF(AV)
Maximum non-repetitive rate of rise of
turned on current
dI/dt
TJ = 25 °C, from 0.67 VDRM,
ITM =
π x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
150
A/μs
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
250
mA
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
or
I
(RMS)
I
(RMS)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VSKT91/04 | 210 A, 400 V, SCR |
| VSKT91/06 | 210 A, 600 V, SCR |
| VSKT91/08 | 210 A, 800 V, SCR |
| VSKT91/10 | 210 A, 1000 V, SCR |
| VSKT91/12 | 210 A, 1200 V, SCR |
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