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參數(shù)資料
| 型號(hào)： | VSKN56/04 |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 94.2 A, 400 V, SCR, TO-240AA |
| 封裝： | ROHS COMPLIANT, TO-240AA COMPATIBLE, ADD-A-PAK-5 |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 708K |
| 代理商： | VSKN56/04 |
Document Number: 94630
For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 05-Aug-09
3
VSK.41.., VSK.56.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
Vishay High Power Products
Note
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.41
VSK.56
UNITS
Maximum peak gate power
PGM
10
W
Maximum average gate power
PG(AV)
2.5
Maximum peak gate current
IGM
2.5
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum gate voltage required to trigger
VGT
TJ = - 40 °C
Anode supply = 6 V
resistive load
4.0
TJ = 25 °C
2.5
TJ = 125 °C
1.7
Maximum gate current required to trigger
IGT
TJ = - 40 °C
Anode supply = 6 V
resistive load
270
mA
TJ = 25 °C
150
TJ = 125 °C
80
Maximum gate voltage that will not trigger
VGD
TJ = 125 °C, rated VDRM applied
0.25
V
Maximum gate current that will not trigger
IGD
TJ = 125 °C, rated VDRM applied
6
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.41
VSK.56
UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
15
mA
Maximum RMS insulation voltage
VINS
50 Hz
3000 (1 min)
3600 (1 s)
V
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = 125 °C, linear to 0.67 VDRM
1000
V/s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.41
VSK.56
UNITS
Junction operating and storage
temperature range
TJ, TStg
- 40 to 125
°C
Maximum internal thermal resistance,
junction to case per leg
RthJC
DC operation
0.44
0.35
°C/W
Typical thermal resistance,
case to heatsink per module
RthCS
Mounting surface flat, smooth and greased
0.1
Mounting torque ± 10 %
to heatsink
A mounting compound is recommended and the
torque should be rechecked after a period of
3 h to allow for the spread of the compound.
4
Nm
busbar
3
Approximate weight
75
g
2.7
oz.
Case style
JEDEC
TO-240AA compatible
ΔR CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.41..
0.110
0.131
0.17
0.23
0.342
0.085
0.138
0.177
0.235
0.345
°C/W
VSK.56..
0.088
0.104
0.134
0.184
0.273
0.07
0.111
0.143
0.189
0.275
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VSKN56/06 | 94.2 A, 600 V, SCR, TO-240AA |
| VSKN56/08 | 94.2 A, 800 V, SCR, TO-240AA |
| VSKN56/10 | 94.2 A, 1000 V, SCR, TO-240AA |
| VSKN56/12 | 94.2 A, 1200 V, SCR, TO-240AA |
| VSKN56/14 | 94.2 A, 1400 V, SCR, TO-240AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VSKN71-04 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 75 A |
| VSKN71-06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 75 A |
| VSKN71-08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 75 A |
| VSKN71-10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 75 A |
| VSKN71-12 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 75 A |
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