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參數(shù)資料
| 型號： | VSKL71/12 |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 117.75 A, 1200 V, SCR, TO-240AA |
| 封裝： | ROHS COMPLIANT, TO-240AA COMPATIBLE, ADD-A-PAK-5 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 413K |
| 代理商： | VSKL71/12 |
www.vishay.com
For technical questions, contact: indmodules@vishay.com
Document Number: 94631
2
Revision: 05-Aug-09
VSK.71.. Series
Vishay High Power Products
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 75 A
ELECTRICAL SPECIFICATIONS
Notes
(1) I2t for time tx = I2√t x √tx
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7 % x
π x I
AV < I < π x IAV
(4) I >
π x I
AV
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
IRRM,
IDRM
AT 125 °C
mA
VSK.71
04
400
500
400
15
06
600
700
600
08
800
900
800
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current (thyristors)
IT(AV)
180° conduction, half sine wave,
TC = 85 °C
75
A
Maximum average forward current (diodes)
IF(AV)
Maximum continuous RMS on-state current,
as AC switch
IO(RMS)
165
Maximum peak, one-cycle non-repetitive
on-state or forward current
ITSM
or
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial TJ = TJ maximum
1300
t = 8.3 ms
1360
t = 10 ms
100 % VRRM
reapplied
1093
t = 8.3 ms
1140
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
Initial TJ = TJ maximum
8.45
kA2s
t = 8.3 ms
7.68
t = 10 ms
100 % VRRM
reapplied
5.97
t = 8.3 ms
5.45
Maximum I2
√t for fusing
I2
√t (1)
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
84.5
kA2
√s
Maximum value or threshold voltage
VT(TO) (2)
Low level (3)
TJ = TJ maximum
0.96
V
High level (4)
1.08
Maximum value of on-state
slope resistance
rt (2)
Low level (3)
TJ = TJ maximum
3.28
m
Ω
High level (4)
2.86
Maximum peak on-state or forward voltage
VTM
ITM = π x IT(AV)
TJ = 25 °C
1.72
V
VFM
IFM = π x IF(AV)
Maximum non-repetitive rate of rise of
turned on current
dI/dt
TJ = 25 °C, from 0.67 VDRM,
ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 s, tp > 6 s
150
A/s
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
250
mA
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
or
I
(RMS)
I
(RMS)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VSKL71/14 | 117.75 A, 1400 V, SCR, TO-240AA |
| VSKL71/16 | 117.75 A, 1600 V, SCR, TO-240AA |
| VSKN71/04 | 117.75 A, 400 V, SCR, TO-240AA |
| VSKN71/06 | 117.75 A, 600 V, SCR, TO-240AA |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VSKL71-14 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 75 A |
| VSKL71-16 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 75 A |
| VSKL72/08P | 功能描述:SCR模塊 800 Volt 75 Amp RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
| VSKL91/04P | 功能描述:SCR模塊 400 Volt 95 Amp RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
| VSKL91/06P | 功能描述:SCR模塊 600 Volt 95 Amp RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
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